Unlock instant, AI-driven research and patent intelligence for your innovation.

Method of patterning multi-layer structure

A multi-layer structure and patterning technology, which is applied to the photolithographic process of the pattern surface, instruments, electrical components, etc., can solve the problems of low edge quality and surface pollution of multi-layer structures

Inactive Publication Date: 2019-01-22
SAMSUNG CORNING PRECISION MATERIALS CO LTD
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method is also associated with some problems, such as the low quality of the edge of the final multilayer structure and the contamination of the surface by residual particles.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of patterning multi-layer structure
  • Method of patterning multi-layer structure
  • Method of patterning multi-layer structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0060] Figure 12 to Figure 14 is an electron microscope image of a light extraction substrate according to an exemplary embodiment after removal of the first region of the scattering layer.

[0061] Porous TiO 2 The scattering layer was then coated by bar coating with an organic / inorganic hybrid polymer available from Toray Industries to form a planarization layer on the scattering layer. Thereafter, only the first area of ​​the scattering layer not coated with the planarizing layer was selectively wiped using an ethanol-moistened wipe available from Ultimacompany. Subsequently, images are captured using an electron microscope. Figure 12 is an image of the light extraction substrate captured in an oblique orientation such that a profile along the thickness and the top surface of the light extraction substrate can be captured simultaneously; Figure 13 yes Figure 12 Enlarged image of the rectangular box of ; and Figure 14 is an image of the top surface of the light ext...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
specific surface areaaaaaaaaaaa
specific surface areaaaaaaaaaaa
Login to View More

Abstract

A method of patterning a multilayer structure and a method of manufacturing a light extraction substrate of an OLED device are disclosed. A first layer or a scattering layer having a number of voids therein is formed on a first surface of a substrate. A second layer or a planarization layer is formed on the first layer or the scattering layer such that a surface of a first area of the first layeror the scattering layer is exposed, wherein a portion of a material of the second layer or the planarization layer is infiltrated into the number of voids to be attached to at least a portion of the first surface of the substrate. The first area of the first layer or the scattering layer is removed.

Description

technical field [0001] This application claims the benefit of priority of Korean Patent Application Serial No. 10-2017-0089630 filed on July 14, 2017, the content of which is relied upon and incorporated herein by reference in its entirety. [0002] The present disclosure relates to a method of patterning a multilayer structure, and more particularly, to a method of forming a second layer on a first layer so that a portion of the first layer is exposed, and then removing the first layer. A method of patterning a multilayer structure by said partial region of a layer. Background technique [0003] The multilayer structures formed on the substrate are manufactured and used as intermediate or final products in various technical fields. For example, multilayer structures can be fabricated as intermediate products in processes such as making display devices, semiconductor devices, and lighting devices. The layers of such multilayer structures need to be patterned into shapes wi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/52H10K99/00
CPCH10K59/877H10K71/20H10K71/851G03F7/2022C03C17/002G03F7/0035G03F7/7005H01L21/78H10K71/00H10K71/135H10K50/854
Inventor 金东铉金义秀李铉海李俊英尹健尚
Owner SAMSUNG CORNING PRECISION MATERIALS CO LTD