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Manufacturing method of semiconductor device

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as damage to semiconductor components

Active Publication Date: 2021-11-16
DENSO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When one metal plate is brought into abutment against the bottom surface of the cavity and the other metal plate is brought into abutment against the upper surface of the cavity and resin is injected into the cavity, the component sandwiched by the bottom surface and the upper surface of the cavity occurs Due to thermal expansion, the semiconductor element clamped by the metal plate is compressed and may suffer damage

Method used

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  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0028] A semiconductor device 2 according to an embodiment will be described with reference to the drawings. figure 1 A perspective view of the semiconductor device 2 is shown. The semiconductor device 2 is a device in which four semiconductor elements are sealed in a resin package 9 . figure 2 A circuit diagram of the inside of the package 9 is shown. The circuit of the semiconductor device 2 includes two transistors TH, TL and two diodes DH, DL. The two transistors TH, TL and the two diodes DH, DL are power semiconductor components, mainly used for power conversion. The semiconductor device 2 is typically used in an inverter that supplies electric power to a running motor in an electric vehicle, a hybrid vehicle, a fuel cell vehicle, or the like.

[0029] Two transistors TH, TL are connected in series. The diode DH is connected in antiparallel to the transistor TH, and the diode DL is connected in antiparallel to the transistor TL. For convenience of description, one o...

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PUM

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Abstract

The present invention relates to a method of manufacturing a semiconductor device. In the semiconductor device, a metal plate is exposed on both sides of a resin package to provide a method of manufacturing that air bubbles are less likely to remain in the package. The manufacturing method disclosed in this specification includes a preparation step, an installation step, a molding step, and a removal step. In the preparation process, an assembly of a semiconductor element and a metal plate is prepared. In the setting step, the assembly is set in a cavity of a mold for molding the resin package. The assembly is arranged with one metal plate in contact with the bottom surface of the cavity and spaced above the other metal plate. In the molding process, the molten resin is injected into the cavity so as to cover the metal plate, and the injection of the molten resin is stopped while leaving a part of the upper part of the cavity to harden the resin. In the removal process, the resin portion covering the metal plate is removed.

Description

technical field [0001] The technology disclosed in this specification discloses a method of manufacturing a semiconductor device in which a semiconductor element is sandwiched between a pair of metal plates, the semiconductor element is sealed by a resin package, and the metal plates are exposed on both sides of the resin package. The metal plate functions as a radiator plate that dissipates heat from the semiconductor element. Background technique [0002] The semiconductor device described above is manufactured through the following steps. First, an assembly of a semiconductor element and a pair of metal plates is prepared. Next, this assembly is set in a cavity of a mold for molding a resin package. When one metal plate is brought into abutment against the bottom surface of the cavity and the other metal plate is brought into abutment against the upper surface of the cavity and resin is injected into the cavity, the component sandwiched by the bottom surface and the upp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/50H01L21/56H01L21/60H01L23/488
CPCH01L21/50H01L21/56H01L24/32H01L24/83H01L2224/32245H01L2224/49171H01L2924/181H01L23/4334H01L2224/40245H01L24/29H01L2224/3303H01L2224/04026H01L2224/04042H01L2224/291H01L2224/48247H01L2224/73215H01L24/33H01L2224/33181H01L23/051H01L21/565H01L23/3107H01L25/115H01L25/50H01L2224/2612H01L2924/00012H01L2924/014H01L2924/00014H01L25/072H01L25/18H01L23/367
Inventor 门口卓矢花木裕治山中温子舟野祥高萩智岩崎真悟
Owner DENSO CORP