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Method for forming a three-dimensional memory device and three-dimensional memory device

A three-dimensional storage and device technology, applied in semiconductor devices, electrical solid devices, electrical components, etc., can solve problems such as poor formation of lower channel holes, device reliability leakage, etc.

Active Publication Date: 2021-02-26
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of this, an embodiment of the present invention provides a method for forming a three-dimensional memory device and a three-dimensional memory device, which can solve the problems of device reliability and leakage caused by the failure of the lower channel hole to form a better epitaxial structure.

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  • Method for forming a three-dimensional memory device and three-dimensional memory device
  • Method for forming a three-dimensional memory device and three-dimensional memory device
  • Method for forming a three-dimensional memory device and three-dimensional memory device

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Embodiment 1

[0055] An embodiment of the present invention provides a method for forming a three-dimensional memory device, figure 2 It is a schematic diagram of the implementation flow of the method for forming a three-dimensional storage device provided in Embodiment 1 of the present invention, as shown in figure 2 As shown, the method includes the following steps:

[0056] Step S201 , etching the lower stacked layer of the three-dimensional memory device to form N lower channel holes.

[0057] Here, the lower stacked layer of the three-dimensional memory device is a stacked layer in which insulating layers and semiconductor layers are alternately stacked. In this embodiment, the lower channel hole is a through hole in the lower stack, and an etching technique, such as reactive ion etching (ReactiveIon Etching, RIE) technology, may be used to etch the lower stack until the surface of the substrate is exposed to form lower channel hole. Alternatively, the lower channel holes can also b...

Embodiment 2

[0075] An embodiment of the present invention provides a method for forming a three-dimensional memory device, Figure 4 It is a schematic diagram of the implementation flow of the method for forming a three-dimensional storage device provided in Embodiment 2 of the present invention, as shown in Figure 4 As shown, the method includes the following steps:

[0076] Step S401 , etching the lower stacked layer of the three-dimensional memory device to form N lower channel holes.

[0077] Here, the lower stacked layer of the three-dimensional memory device is a stacked layer in which insulating layers and semiconductor layers are alternately stacked. In this embodiment, the lower channel hole is a through hole in the lower stack layer, and the lower stack layer may be etched using an etching technique, such as RIE technology, until the surface of the substrate is exposed, so as to form the lower channel hole. Alternatively, the lower channel holes can also be realized by photol...

Embodiment 3

[0107] An embodiment of the present invention provides a three-dimensional storage device. In this embodiment, the three-dimensional storage device may be a 3D flash memory, such as a 3D NAND flash memory.

[0108] Figure 6 A schematic structural diagram of a three-dimensional storage device provided in Embodiment 3 of the present invention, as shown in Figure 6 As shown, the three-dimensional memory device includes:

[0109] Lower laminate 61;

[0110] N lower channel holes 611 located in the lower lamination layer 61;

[0111] an upper stack 62 formed on the lower stack 61;

[0112] M upper channel holes 621 located in the upper stack 62 .

[0113] Here, the lower stacked layer 61 is a stacked layer in which insulating layers and semiconductor layers are alternately stacked. The lower stack 61 may be formed by vertically stacking multiple layers of memory cells. For example, the lower laminated layer 61 may be formed by circularly stacking the first material layer 61...

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Abstract

The embodiment of the present invention discloses a method for forming a three-dimensional memory device and the three-dimensional memory device, wherein the method includes: etching the lower layer of the three-dimensional memory device to form N lower channel holes, wherein N is greater than or equal to 2 Depositing on the lower stack to form an upper stack; etching the upper stack corresponding to the lower channel holes to form M upper channel holes, wherein M is less than N, and the M upper channel holes One-to-one correspondence with the M lower channel holes in the N lower channel holes.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductor devices and their manufacture, and relate to, but are not limited to, a method for forming a three-dimensional storage device and a three-dimensional storage device. Background technique [0002] In order to overcome the limitations of two-dimensional memory devices, the industry has developed memory devices with a three-dimensional structure, and the integration density is increased by three-dimensionally arranging memory cells on a substrate. [0003] Existing double-layer three-dimensional storage devices, such as double-layer three-dimensional computer flash memory (3D NAND) storage devices, both the upper stack and the lower stack adopt the method of vertically stacking multi-layer memory cells to realize a stacked 3D NAND storage device . Such as figure 1 As shown, it is an existing double-layer 3D NAND storage device. The lower stack 10 and the upper stack 11 of the stac...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/115H01L27/11582H01L27/1157H10B69/00H10B43/27H10B43/35
CPCH10B43/35H10B69/00H10B43/27
Inventor 杨号号朱宏斌张勇张若芳
Owner YANGTZE MEMORY TECH CO LTD
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