Level shifting circuit

Abstract

The invention discloses a level shifting circuit comprising a phase inverter and a level shifting unit; the level shifting unit comprises a first NMOS transistor, a second NMOS transistor, a first PMOS transistor, a second PMOS transistor and a confrontation isolating circuit; the grid of the NMOS transistor is coupled with a low-voltage signal output end; the low-voltage signal output end is coupled with the grid of the second NMOS transistor via the phase inverter; the drain of the first NMOS transistor serves as a first output end; the drain of the second NMOS transistor serves as a secondoutput end; the confrontation isolating circuit is coupled between the PMOS transistors and the NMOS transistors of the level shifting circuit, and applicable to isolating confrontation between the coupled PMOS transistors and NMOS transistors during the process that the level shifting circuit performs level shifting. With the application of the scheme of the circuit, the time of confrontation between the PMOS transistors and the NMOS transistors during the level shifting process can be effectively shortened, and the penetrating current generated during the level shifting process can be reduced; therefore, the level shifting speed is improved and the power consumption is reduced, the application requirements on high speed, low voltage and low power consumption are met.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuits, in particular to a level shift circuit. Background technique [0002] Driven by the development of the Internet of Things, handheld devices emerge in an endless stream, which makes the integration of chips continue to increase, and the integration of functional modules in different voltage domains is becoming more and more common. As an interface circuit for communication between different voltage domains, level shifting circuits are crucial. [0003] The level shift circuit is mainly used to convert the high-level signal and low-level signal in the low-voltage domain into the corresponding high-level signal and low-level signal in the high-voltage domain. In practical applications, due to the further reduction of the power supply voltage of the corresponding voltage domain inside the chip, the reliable operation of the level shift circuit at a lower voltage is a challenge, and t...

AI Technical Summary

Problems solved by technology

[0004] However, existing level-shifting circuits have low speed for level-to-level rotation and high power consumption

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