Semiconductor structure and manufacturing method thereof

Abstract

The present invention proposes a semiconductor structure and a manufacturing method thereof, wherein the manufacturing method of the semiconductor structure includes providing a semiconductor substrate, forming a trench in the semiconductor substrate, filling the trench with a first semiconductor material, and the first semiconductor material does not have a dopant , forming a second semiconductor material on the first semiconductor material, the second semiconductor material contains dopants, and performing heat treatment, so that the dopants in the second semiconductor material diffuse into the first semiconductor material to form a doped The third semiconductor material is in the trench. In the semiconductor structure formed by the semiconductor structure manufacturing method of the present invention, pores or channels will not be formed in the semiconductor material in the trench, and the doped semiconductor material will be formed in the trench after heat treatment, thereby avoiding subsequent processes. The problem caused by the flow of the material used in the trench into the pores or channels of the doped semiconductor material in the trench, thus improving the reliability of the semiconductor device.

Description

technical field [0001] Embodiments of the present invention relate to semiconductor manufacturing technology, and in particular to a semiconductor structure with a doped semiconductor material filled in a trench and a manufacturing method thereof. Background technique [0002] The semiconductor integrated circuit industry has experienced rapid growth over the past few decades. Advances in semiconductor materials and manufacturing techniques have resulted in smaller and smaller components and more complex fabrication. Advances in miniaturization and performance enhancement of semiconductor elements have been achieved due to advances in semiconductor process technology. In the course of the development of semiconductor manufacturing, since the size of the smallest element that can be reliably manufactured is getting smaller and smaller, the number of interconnectable elements per unit area is increasing. [0003] In order to effectively reduce the size of semiconductor compo...

AI Technical Summary

Problems solved by technology

[0004] Although the semiconductor integrated circuit industry has made many developments aimed at reducing the size of components, however, as the size of the smallest components continues to shrink, many challenges arise

For example, as the trench width shrinks (or the aspect ratio increases), defects such as voids or vias may form in the material within the trench, resulting in reduced reliability of the semiconductor device

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