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Thinning polishing mold and method for high-length-width ratio infrared focal plane detector

An infrared focal plane, thinning and polishing technology, used in surface polishing machine tools, grinding/polishing equipment, manufacturing tools, etc. Flatness, detector performance degradation, etc., to ensure the quality of the thinning process, solve the problem of easy breakage, and reduce the impact

Active Publication Date: 2019-03-01
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, with the continuous increase in the scale of infrared focal plane detectors, their size and aspect ratio are also gradually increasing, which brings new challenges to the thinning and polishing technology.
At the same time, in order to reduce the operational difficulty of subsequent processing and broaden the scope of application, the detector module is mainly used for thinning. However, it is difficult to guarantee the thickness of this type of detector due to the increase in aspect ratio and scale when using traditional techniques. The detector rotates horizontally and the force on the surface is uniform, so a large amount of physical damage is usually introduced during the mechanical rotation grinding process, and it is difficult to precisely control the thinning thickness and polishing flatness, resulting in a decrease in the performance of the detector after thinning

Method used

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  • Thinning polishing mold and method for high-length-width ratio infrared focal plane detector
  • Thinning polishing mold and method for high-length-width ratio infrared focal plane detector
  • Thinning polishing mold and method for high-length-width ratio infrared focal plane detector

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Experimental program
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Effect test

Embodiment 1

[0034] 1 Filling and curing, filling the interconnection layer 3 with DW-3 epoxy adhesive, curing at room temperature for ~72h;

[0035] 2 Paste the electrode protection lining, paste the electrode protection lining 5 on the protruding parts of the readout circuit 2 on both sides of the photosensitive chip 4 with photoresist, the material of the electrode protection lining 5 is indium phosphide, and the size is 15.5mm× 0.6mm×0.35mm, placed horizontally, baked at 65°C for ~5h;

[0036] 3 Fix the detector, fix the infrared focal plane detector on the center of the fixture substrate 1 with paraffin wax, the size is 31.4mm×5.5mm×1.07mm, and the thickness of the photosensitive chip 4 is 0.33mm;

[0037] 4 Fix the height compensation gasket, fix the height compensation gasket 6 in the groove of the fixture base plate 1 with paraffin, wherein the size of the groove is 30.5mm×5.5mm×0.1mm, and the size of the height compensation gasket 6 is 30mm×5mm× 0.85mm;

[0038] 5 Fix the chip p...

Embodiment 2

[0043] 1 Filling and curing, filling the interconnection layer 3 with DW-3 epoxy adhesive, curing at room temperature for ~72h;

[0044] 2 Paste the electrode protection lining, paste the electrode protection lining 5 on the protruding parts of the readout circuit 2 on both sides of the photosensitive chip 4 with photoresist, the material of the electrode protection lining 5 is indium phosphide, and the size is 14.5mm× 1mm×0.36mm, placed horizontally, baked at 65°C for ~5h;

[0045] 3 Fix the detector, fix the infrared focal plane detector on the center of the fixture substrate 1 with paraffin wax, the size is 30mm×9.2mm×0.81mm, and the thickness of the photosensitive chip 4 is 0.35mm;

[0046] 4 Fix the height compensation gasket, fix the height compensation gasket 6 in the groove of the fixture base plate 1 with paraffin, where the size of the groove is 29.5mm×8.5mm×0.1mm, and the size of the height compensation gasket 6 is 29mm×8mm× 0.59mm;

[0047] 5 Fix the chip protect...

Embodiment 3

[0052] 1 Filling and curing, filling the interconnection layer 3 with DW-3 epoxy adhesive, curing at room temperature for ~72h;

[0053] 2 Paste the electrode protection lining, paste the electrode protection lining 5 on the protruding parts of the readout circuit 2 on both sides of the photosensitive chip 4 with photoresist, the material of the electrode protection lining 5 is mercury cadmium telluride, and the size is 8mm×1.2 mm×0.36mm, placed horizontally, baked at 65°C for ~5h;

[0054] 3 Fix the detector, fix the infrared focal plane detector in the center of the fixture substrate with paraffin, the size is 16.2mm×5.4mm×0.83mm, and the thickness of the photosensitive chip 4 is 0.35mm;

[0055] 4 Fix the height compensation gasket, fix the height compensation gasket 6 in the groove of the fixture base plate 1 with paraffin, wherein the size of the groove is 15.5mm×5.5mm×0.1mm, and the size of the height compensation gasket 6 is 15mm×5mm× 0.59mm;

[0056] 5 Fix the chip p...

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Abstract

The invention discloses a thinning polishing mold and method for a high-length-width ratio infrared focal plane detector. The thinning polishing mold comprises a fixture substrate in which grooves arecarved, electrode protective gaskets, height compensation gaskets and chip protective gaskets. A utilization method comprises the steps that the electrode protective gaskets are pasted in convex parts, on the two sides of a photosensitive chip, of a reading circuit; the infrared focal plane detector and the height compensation gaskets are separately fixed in the center and the grooves of the fixture substrate; the chip protective gaskets are fixed to the centers of the height compensation gaskets; and thinning polishing is carried out on the infrared focal plane detector. The thinning polishing mold and the thinning polishing method have the advantages that (1) the problem that the high-length-width ratio infrared focal plane detector is liable to break during the mechanical thinning process is solved, and hundred-micron dimension thinning can be achieved; (2) the thinning thickness can be accurately controlled, the surface of the detector has good flatness after thinning; and (3) physical damage caused to the detector during the thinning process is remarkably reduced, and reduction of performance of the detector is avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductor chip manufacturing, in particular to a thinning and polishing mold and method for infrared focal plane detectors with a high aspect ratio, and is suitable for inclusion readout with a length of 15-40 mm, an aspect ratio of 2-6, and a thickness of 800-1400 μm. The thinning and polishing of infrared focal plane detectors of circuits, interconnection layers and photosensitive chips can realize thin substrate, high precision and low damage thinning and polishing of infrared focal plane detectors with high aspect ratio. Background technique [0002] The infrared focal plane detector is usually composed of three parts: an infrared photosensitive chip, an interconnection layer and a readout circuit. According to the arrangement of photosensitive elements in the photosensitive chip, it can be divided into two structures: line array and area array, which can be used for scanning and staring respective...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B1/00B24B29/02
CPCB24B1/00B24B29/02
Inventor 孙夺杨波于一榛李雪邵秀梅
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI