Epitaxial and integrated high-contrast grating external cavity surface emitting laser

A high-contrast grating, laser-emitting technology, applied in lasers, laser parts, semiconductor lasers, etc., can solve the problems of affecting the quality of light, polarization uncertainty, polarization instability, etc., to increase structural reliability, reduce threshold, improve The effect of yield

Active Publication Date: 2018-03-06
BEIJING UNIV OF TECH
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Problems solved by technology

Due to the anisotropy of the material of the oxidation confinement layer and the anisotropy of the gain of the material in the active region, the ordinary oxidation-type vertical cavity surface emitting laser has polarization uncertainty or instability. In addition, due to the active Polarization instability may also occur due to temperature changes in the region; secondly, in ordinary oxide-type vertical cavity surface emitting lasers, due to their inherently short photon lifetime, it becomes very difficult to narrow the linewidth below 100MHz, usually at range of several hundred MHz
Polarization instability, wide line width and other characteristics seriously affect the light quality of vertical cavity surface emitting lasers, hindering the application of vertical cavity surface emitting lasers in high-precision systems such as atomic microsystems

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  • Epitaxial and integrated high-contrast grating external cavity surface emitting laser
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  • Epitaxial and integrated high-contrast grating external cavity surface emitting laser

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Embodiment Construction

[0020] Such as Figure 1-3 As shown, the 850nm epitaxial wafer is grown by MOCVD, silicon dioxide is deposited by PECVD, the mesa pattern is obtained after photolithography, and the mesa is obtained by ICP etching to expose Al 0.98 Ga 0.02 Oxidation-limited layer (4) of As high-alumina component, current-limited oxidation hole (9) is obtained by wet oxidation, passivation layer (2) is grown by PECVD, light exit hole (15) is obtained after photolithography, and magnetron sputtering is used The P-type metal electrode layer (1) is obtained by sputtering and stripping process, the N-type metal electrode layer (8) is obtained by magnetron sputtering, and the ordinary oxidized vertical cavity surface emitting laser (attached figure 1 ); by plasma chemical vapor deposition, magnetron sputtering or MOCVD and other processes, the dielectric layer is deposited to a common vertical cavity surface emitting laser device to form a phase matching layer (10) and a cavity length matching laye...

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Abstract

The present invention discloses an epitaxial and integrated high-contrast grating external cavity surface emitting laser. A common oxidized vertical cavity surface emitting laser (VCSEL) has polarization indeterminacy or instability phenomenon phenomena caused by anisotropy of oxidization limiting layer materials and anisotropy of active region material gains of the common oxidized vertical cavitysurface emitting laser, and a traditional external cavity line width narrowing method is always complex and low in integration level, and is not helpful for a chip level design. The method for growthof a phase matching layer and a cavity length matching layer is employed to prolong the cavity length of the VCSEL, and a dielectric layer with a low refractive index is formed in one epitaxy mode and is taken as a grating support layer and a grating dielectric layer; and moreover, the grating dielectric layer is etched to form grating microstructures, and therefore, the line width is narrowed while light polarization is achieved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lasers, in particular to an epitaxy integrated high contrast grating external cavity surface emitting laser. Background technique [0002] Vertical cavity surface emitting laser (VCSEL) is widely used in optical communication, 3D printing, laser radar, integrated microchip system and other fields due to its characteristics of miniaturization, low power loss, fast modulation response and continuous beam output. . Due to the anisotropy of the material of the oxidation confinement layer and the anisotropy of the gain of the material in the active region, the ordinary oxidation-type vertical cavity surface emitting laser has polarization uncertainty or instability. In addition, due to the active Polarization instability may also occur due to temperature changes in the region; secondly, in ordinary oxide-type vertical cavity surface emitting lasers, due to its inherent short photon lifetime, it ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183
Inventor 解意洋徐晨王秋华潘冠中董毅博安亚宁吴俊
Owner BEIJING UNIV OF TECH
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