The invention provides a non-polar ALGAN-based Schottky
UV detector. The non-polar ALGAN-based Schottky
UV detector is sequentially provided with a substrate, a low temperature AlN
nucleation layer, ahigh temperature AlN buffer layer, an AlN / AlxGa1-xN
superlattice structure, an n-type doped n-AlyGa1-yN layer, an n-type doped n-AlzGa1-zN
absorption layer, an AlN barrier enhancement layer and a
metal film layer from bottom to top, wherein an ohmic
electrode is extracted in the n-AlyGa1-yN layer, and o<y<z<x<1. The
detector is advantaged in that as the non-polar n-AlyGa1-yN layer has a laterallypolarized
electric field directed from an
anode to a
cathode, photogenerated carriers in the n-AlyGa1-yN layer are accelerated to migrate to the ohmic
electrode,
photocurrent generation efficiency isgreatly improved, and thereby
photoelectric conversion efficiency and responsiveness of the device are improved; the AlN / AlxGa1-xN
superlattice structure is inserted, buffer layer barrier height is increased, and
crystal quality of the AlGaN epitaxial layer is improved; the AlN barrier enhancement layer is interposed between the n-AlzGa1-zN
absorption layer and the
metal film layer, height and thickness of a
Schottky barrier can effectively be increased, through
insertion of the AlN / AlxGa1-xN
superlattice structure and the AlN barrier enhancement layer, reducing the
dark current of the deviceis facilitated, and the
signal-to-
noise ratio and stability of the
detector are improved.