A kind of epitaxial growth method of nitride

Abstract

The invention provides a nitride epitaxial growth method comprising the following steps that a substrate is provided; a first aluminum nitride layer is grown on one surface of the substrate under first temperature and first ammonia gas flow; a second aluminum nitride layer is grown on one surface of the first aluminum nitride layer under second temperature and second ammonia gas flow; a third aluminum nitride layer is grown on one surface of the second aluminum nitride layer under third temperature and third ammonia gas flow, and a nucleation layer is formed by the first aluminum nitride layer, the second aluminum nitride layer and the third aluminum nitride layer, wherein second temperature and third temperature are greater than first temperature, and the first ammonia gas flow and the second ammonia gas flow are greater than the third ammonia gas flow; and a nitride layer is grown on the surface of the nucleation layer. The advantages of the nitride epitaxial growth method are that problems of crystal lattice mismatch and thermal mismatch existing in nitride heteroepitaxy growth can be alleviated, stress can be reduced and dislocation density can be reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a nitride epitaxial growth method. Background technique [0002] GaN-based semiconductor materials have excellent and unique electrical and optical properties, such as wide direct bandgap, high thermal conductivity, large breakdown electric field strength, high temperature and high pressure resistance, corrosion resistance, radiation resistance, etc., suitable for applications in harsh conditions Environment. Gallium nitride-based semiconductor materials can be used to prepare optoelectronic devices such as ultraviolet / blue / green light-emitting diodes (LEDs), lasers (LDs), photodetectors, and high-frequency, high-voltage, high-power, radiation-resistant high electron mobility transistors (HEMTs) ) and power electronics (power) devices and other electronic devices. [0003] At present, the single crystal substrate preparation technology of gallium nitride or aluminum nitr...

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a nitride epitaxial growth method, which can alleviate the problems of lattice mismatch and thermal mismatch in growing nitride heteroepitaxial growth, reduce stress, and reduce dislocation density.

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