A Nonpolar Algan-based Schottky UV Detector

Abstract

The present invention provides a non -polar Algan Krutki UV detector. From bottom to top to set up substrate, low -temperature aln nuclear layer, high temperature Aln buffer layer, Aln / Al x GA 1‑x N -ultra -crystal structure, N -type doped N‑al y GA 1‑y N layer, N -type doped n 、al z GA 1‑z N absorbing layer, ALN potential barrier enhancement layer, metal film layer, in N‑al y GA 1‑y The n layer leads the Ohm electrode, where 0 <y <z <x <1.Due to non -polar N‑al y GA 1‑y There is a horizontal polarized electric field that points to cathode in the n layer, so it will speed up the photochemical carrier in N‑al y GA 1‑y The N layer migrates to the EME, thereby greatly improving the production efficiency of the optical current, thereby improving the optoelectronic conversion efficiency and response of the device.Insert aln / al x GA 1‑x N -ultra -crystal structure, while increasing the height of the buffer layer, improve the crystal quality of the Algan extension layer.In N‑al z GA 1‑z N The enhanced layer of the ALN Blood of the absorbing layer and the metal film layer can effectively increase the height and thickness of the Schartki Blood.Therefore, aln / al x GA 1‑x The insertion of the N -ultra -lattice structure and the ALN potential barrier enhanced layer is conducive to reducing the dark current of the device and improving the signal -to -noise ratio and stability of the detector.

Description

technical field

[0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to a non-polar AlGaN-based Schottky ultraviolet detector. Background technique

[0002] With the vigorous development of third-generation semiconductor materials such as GaN, diamond and SiC, it will lay the foundation for the development of high-performance ultraviolet detectors. Especially AlGaN material, because its forbidden band width can be adjusted between 3.4-6.2 eV by controlling the aluminum composition, and the corresponding spectral wavelength covers the ultraviolet region of 365-200 nm, so it has significant advantages in ultraviolet detection. It is an ideal material for making ultraviolet photodetection devices.

[0003] At present, most of the ultraviolet detectors used in the market are such as figure 2 The p-n junction or pin structure shown is usually back-illuminated. Compared with these traditional UV detectors, Schottky UV detectors have u...

Images