Carbon/carbon composite material crucible with composite ceramic layer and preparation method of carbon/carbon composite material crucible

Abstract

The invention discloses a carbon / carbon composite material crucible with a composite ceramic layer and a preparation method thereof. The carbon / carbon composite material crucible is composed of a carbon / carbon composite material crucible base body and the composite ceramic layer attached to the inner surface of the carbon / carbon composite material crucible base body, the thickness of the composite ceramic layer ranges from 1 mm to 5 mm, the composite ceramic layer is composed of, by mass, 50%-70% of silicon carbide, 10%-40% of boron nitride and 10%-20% of silicon. According to the preparation method, a split type preparation method is adopted for the carbon / carbon composite material crucible base body with the composite ceramic layer, a composite ceramic layer blank is prepared firstly, then the composite ceramic layer blank is bonded through a binding agent, then carbonization and siliconizing treatment are conducted, and the carbon / carbon composite crucible base body and the composite ceramic layer become a whole. By means of the preparation method, the composite ceramic layer which is thick enough can be obtained, and therefore erosion of silicon steam to the carbon / carbon composite material crucible base body is effectively restrained.

Description

technical field [0001] The invention belongs to the technical field of thermal field components for single crystal silicon drawing furnaces, and in particular relates to a carbon / carbon composite material crucible with a composite ceramic layer and a preparation method thereof. Background technique [0002] In recent years, with the depletion of fossil energy and people's requirements for energy conservation and environmental protection, the country has vigorously advocated the development of the photovoltaic industry. In the current field of photovoltaic technology, monocrystalline silicon solar cells are the most mature technology with relatively high photoelectric conversion efficiency. High, therefore, the current market demand for monocrystalline silicon is huge. [0003] However, more than 80% of the production of single crystal silicon adopts the CZ (Czochralski, CZ method for short) Czochralski method, that is, it is prepared by pulling a seed crystal in a single cry...

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Problems solved by technology

However, considering the production environment of the single crystal silicon drawing furnace, on the one hand, the high temperature of molten silicon causes the quartz crucible to soften and deform; on the other hand, the gap between the quartz crucible and the C / C composite crucible and the inside of the The silicon material on the surface itself will remain part of the silicon material, which eventually leads to the silicon remaining on the inner surface of the quartz crucible during the process of changing the silicon from liquid to solid. At the same time, due to the volume expansion of silicon from liquid to solid, The combination between the quartz crucible and the C / C crucible is very tight, and the next furnace can only be drawn by breaking the old quartz crucible and replacing it with a new quartz crucible.

Due to the lack of raw materials for the production of quartz crucibles, and the high cost of artificially synthesized raw materials for the production of quartz crucibles, the cost of monocrystalline silicon produced by the current monocrystalline silicon pulling furnace is relatively high.

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