Epitaxial integrated dielectric film distributed bragg reflector (DBR) external cavity surface emitting laser

Abstract

The invention discloses an epitaxial integrated dielectric film DBR external cavity surface emitting laser. The laser comprises a P-type metal electrode layer, a passivation layer, an upper distributed Bragg reflector growing periodically and alternately, an oxidation limiting layer with a high aluminum component, an active region, a lower distributed Bragg reflector growing periodically, a GaAs substrate layer, an N-type metal electrode layer, a current limiting oxidation hole, a phase matching layer, a cavity length matching layer, a silicon oxide and silicon nitride dielectric film distributed Bragg reflector and a light emitting hole; and the inherent cavity length of the vertical cavity surface emitting laser is prolonged by adopting a method of growing a phase matching layer and a cavity length matching layer, and the silicon oxide silicon nitride dielectric film distributed Bragg reflector is extended by adopting an inductively coupled plasma enhanced vapor deposition method, so that the purposes of controlling light polarization and narrowing line width are achieved. The threshold value of the semiconductor laser is reduced, and the yield of the device is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lasers, in particular to an epitaxial integrated dielectric film DBR external cavity surface emitting laser. Background technique [0002] Vertical cavity surface emitting laser (VCSEL) is widely used in optical communication, laser radar, integrated chip system and other fields due to its miniaturization, low power loss, fast modulation response, continuous beam output and other characteristics. Ordinary oxidized vertical cavity surface emitting lasers, due to the anisotropy of the material of the oxidation confinement layer and the anisotropy of the gain of the material in the active region, lead to uncertain or unstable polarization of the laser, and, due to the The change of the temperature of the source region may also cause polarization instability; secondly, in the oxidation-limited vertical strong surface emitting laser, due to the short photon lifetime, it is very difficult to narro...

AI Technical Summary

Problems solved by technology

Ordinary oxidized vertical cavity surface emitting lasers, due to the anisotropy of the material of the oxidation confinement layer and the anisotropy of the gain of the material in the active region, lead to uncertain or unstable polarization of the laser, and, due to the The change of the temperature of the source region may also cause polarization instability; secondly, in the oxidation-limited vertical strong surface emitting laser, due to the short photon lifetime, it is very difficult to narrow the spectral linewidth to less than 100MHz, usually at several Hundreds of MHz range

The above characteristics seriously affect the light quality of vertical cavity surface emitting lasers, and hinder the application of vertical cavity surface emitting lasers in high-precision systems such as atomic microsystems.

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