Methods for depositing molybdenum metal film on dielectric surface of substrate and related semiconductor device structures
A technology of device structure and molybdenum metal, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problems of increased overall resistivity and high resistivity of semiconductor device structures
Pending Publication Date: 2019-03-05
ASM IP HLDG BV
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- Application Information
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However, thick barrier layers generally exhibit high resistivity and thus lead to an increase in the overall resistivity of the semiconductor device structure
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[0019] While certain embodiments and examples are disclosed below, those skilled in the art will understand that the invention extends beyond the specifically disclosed embodiments and / or uses and obvious modifications of the invention and their equivalents. Therefore, it is intended that the scope of the present disclosure should not be limited by the specific disclosed embodiments described below.
[0020] The schematics presented herein are not intended to be actual views of any particular material, structure or device, but are merely idealized illustrations used to describe embodiments of the present disclosure.
[0021] As used herein, the term "substrate" may refer to any one or more underlying materials that may be used or upon which a device, circuit, or film may be formed.
[0022] As used herein, the term "cyclic deposition" may refer to the sequential introduction of one or more precursors (reactants) into a reaction chamber to deposit a film over a substrate and in...
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Abstract
Methods for depositing a molybdenum metal film on a dielectric material surface of a substrate and related semiconductor device structures are disclosed. The methods may include: providing a substratecomprising a dielectric surface into a reaction chamber; and depositing a molybdenum metal film directly on the dielectric surface, wherein depositing comprises: contacting the substrate with a firstvapor phase reactant comprising a molybdenum halide precursor; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. Semiconductor device structures including a molybdenum metal film disposed directly on a surface of a dielectric material deposited by the methods of the disclosure are also disclosed.
Description
[0001] Cross References to Related Applications [0002] This application claims U.S. Nonprovisional Patent Application No. 15 / 691,241, filed August 30, 2017, titled "Layer Forming Method," and U.S. Provisional Patent Application No., titled "Layer Forming Method," filed December 18, 2017 62 / 607,070 and priority to U.S. Provisional Patent Application No. 62 / 619,579, filed January 19, 2018, entitled "Deposition Method." technical field [0003] The present disclosure generally relates to methods of depositing molybdenum metal films on the surface of dielectric materials of substrates and specific methods of depositing molybdenum metal films directly on the surface of dielectric materials by cyclic deposition processes. The present disclosure also generally relates to semiconductor device structures that include a molybdenum metal film disposed directly on a surface of a dielectric material. Background technique [0004] Semiconductor device fabrication processes in advanced...
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IPC IPC(8): C23C16/14C23C16/455
CPCC23C16/14C23C16/45523C23C16/45527H01L21/32051H01L21/28562H01L21/76877H01L23/53257C23C16/00H01L21/28079H01L21/0262H01L21/0228H01L21/02205H01L21/324H01L21/28556H01L2924/01042H01L21/02521H01L21/0259
Inventor B·佐普S·斯瓦弥纳杉K·史瑞斯萨朱驰宇H·T·A·朱希拉谢琦
Owner ASM IP HLDG BV