Self-aligned metal wire on contact structure and method for forming same
A contact structure, metal wire technology, applied in the direction of semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve the problem of inoperability of the semiconductor structure
Active Publication Date: 2019-03-05
TAIWAN SEMICON MFG CO LTD
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
Misaligned metal lines on the contact structure can also render the semiconductor structure inoperable
Method used
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[0136] In the following description, reference is made to the accompanying drawings which form a part hereof, and in which case the drawings are shown by way of illustration of specific embodiments in which the teachings may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the present teachings, and it is to be understood that other embodiments may be utilized and changes may be made without departing from the scope of the present teachings. illustrative.
[0137] Embodiments of the present application provide a structure and method for forming a contact structure and a self-aligned metal line thereon. The method may include forming a contact structure using a larger initial contact structure or dummy contact structure and a patterned mask, and forming a contact structure by removing the patterned mask and forming a conductive layer in place of the patterned mask A self-aligned metal line is on the contact struc...
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Abstract
The invention relates to a self-aligned metal wire on contact structure and method for forming same and a structure and method for forming a self-aligned metal wire on a contact structure. The methodfor forming the self-aligned metal wire and contact structure may include, among other things, forming an initial contact structure above a substrate; forming a patterned mask on the initial contact structure, the mask including an opening; using the patterned mask to form an opening through the initial contact structure; forming a dielectric layer in the openings; removing the patterned mask to expose a remaining portion of the initial contact structure; and forming the metal wire on the remaining portion of the initial contact structure. The contact structure may include a vertical cross-sectional geometry including one of a trapezoid wherein a bottommost surface of the first contact structure is wider than an uppermost surface of the first contact structure, and a parallelogram. The metal wire may completely contact an uppermost surface of the contact structure.
Description
technical field [0001] The present application relates to semiconductor device fabrication, and more particularly, to self-aligned metal lines on a contact structure and methods of forming the contact structure and metal lines. Background technique [0002] Conventional integrated circuit (IC) (ie, chip) formation typically occurs on the surface of a semiconductor substrate (eg, a silicon wafer). An IC may include various interconnected semiconductor devices, such as resistors, transistors, capacitors, etc., formed on the surface of the semiconductor substrate. Due to the large number of devices and the complex layout of ICs, the devices cannot be connected within the same device level. Thus, the devices may be interconnected, for example, by a complex wiring system formed in one or more layers above the device level. The wiring system may include, for example, a stack of metal-containing layers, or metallization layers, including metal lines that provide electrical connec...
Claims
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IPC IPC(8): H01L23/528H01L21/768
CPCH01L21/76877H01L21/76897H01L23/5283H01L23/5226H01L23/53209H01L23/53238H01L23/53252H01L23/53266H01L21/76883H01L21/7682H01L21/76808H01L2221/1031H01L23/485H01L29/41791H01L29/785H01L29/7851H01L29/45H01L29/0847H01L23/535H01L21/28518H01L23/5329H01L21/76805H01L21/76816
Inventor 谢瑞龙古拉密·波奇L·埃克诺米科思孙磊宁国翔张洵渊
Owner TAIWAN SEMICON MFG CO LTD