Atomization assisting CVD thin film deposition method

Abstract

The invention discloses an atomization assisting CVD thin film deposition method. The atomization assisting CVD thin film deposition method is characterized by comprising the following steps that a, an atomization assisting CVD thin film deposition device is designed; b, a plane substrate being about to form a film is placed in an installing hole in a substrate template, then the substrate template is horizontally placed on the upper plate face of a lower lifting plate, and the position of the lower lifting plate is adjusted; d, after a temperature of a reaction area reaches a preset temperature, firstly an atomization source is opened, and is used for atomizing liquid precursors into aerosol precursors, the aerosol precursors are input into a buffering mixing chamber through carrier gas sent out of the atomization source; and e, after the temperature of the reaction area is close to a room temperature or is 45 DEG C or below, the operation that the precursors are input into the buffering mixing chamber through a gas phase matter inflow pipe and an aerosol inflow pipe firstly stops, then a gas sucking pump is closed, finally, a sealing cover is opened, the substrate template is taken out, and finally a substrate is taken down from the substrate template. The thin film deposition method is high in deposition efficiency, reasonable in process arrangement and high in thin film quality.

Description

technical field [0001] The invention belongs to the field of film preparation, in particular to an atomization-assisted CVD film deposition method. Background technique [0002] Thin film materials have a wide range of uses. The existing coating methods mainly include chemical vapor deposition (referred to as CVD) and physical vapor deposition (abbreviated as PVD). There are many sub-categories of coating methods. At present, the precursor of the conventional CVD deposition method is an all-gas phase substance, which is input into the reaction zone of the reaction device to undergo a chemical reaction after being heated or excited by other physical fields, and deposited on the substrate surface, and the CVD method is suitable for preparing high-quality thin films , but the cost is high, the film deposition speed is slow, and most CVD processes need to be carried out in a vacuum environment. The substrate has various structures, such as planar substrate and non-planar subst...

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Problems solved by technology

[0005] 1. The precursor used in CVD is a gas phase. Now there are more academic opinions that the CVD method cannot be directly mixed with a liquid aerosol precursor. In actual use, it is rare to have a liquid phase precursor material input.

[0006] 2. Pyrolytic spraying generally configures the precursor as a solution or a mixed solution and then puts it into the atomization source. After the atomization source is atomized into an aerosol, the liquid aerosol is input into the reaction chamber and pyrolysis occurs in the reaction area, so that The concentration of each component of the precursor cannot be guaranteed, nor can the precursor react in advance, so that the concentration of the precursor solution cannot be guaranteed to be consistent with the concentration of the aerosol liquid particles, and thus the process parameters of the film composition cannot be guaranteed to be credible and repeatable

[0007] 3. The quality of film formation is mainly related to factors such as temperature field, air flow field and precursors. In the prior art, the flat substrate is directly placed on the bottom plane of the reaction zone. We found that the air flow field near the substrate surface in the reaction zone The "distortion" phenomenon will occur due to the thickness of the substrate. The thicker the substrate is, the more significant the "distortion" phenomenon will be, resulting in a sudden change in the airflow field, which will also seriously affect the film quality of the film.

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