Preparation method of monolithic silicon-based photoelectric integrated chip

Abstract

The embodiment of the invention provides a preparation method of a monolithic silicon-based photoelectric integrated chip. A laser device structure grows by etching a pattern window on an SOI substrate, a detector structure grows on a silicon waveguide layer in the SOI substrate, and a laser device and a detector are connected through the etched silicon waveguide structure, so that integration ofthe on-chip laser device, the detector and the silicon waveguide structure is achieved. According to the preparation method of the monolithic silicon-based photoelectric integrated chip, the laser device structure grows by directly etching the pattern window, high repeatability and reliability are achieved, large-scale preparation can be achieved, the cost is greatly reduced, good application prospects are achieved, the blank that a practical on-chip photoelectric integration cannot be achieved through a direct selective area epitaxy mode at present is made up for, and the method particularlysolves the on-chip integration problem of the laser device and other devices.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of silicon-based monolithic optoelectronic integration, and more specifically, to a method for preparing a monolithic silicon-based optoelectronic integrated chip. Background technique [0002] Today, the advancement of information technology is constantly promoting the development of society, and computer systems based on silicon-based microelectronic devices are penetrating into every aspect of people's lives. While enjoying the convenience brought by the advancement of information technology, people are also creating a large amount of data. With the explosive growth of data volume, how to quickly transmit and process these data has become a new challenge, especially in data center supercomputers and other application scenarios that require ultra-large-scale and ultra-high-speed data transmission and processing capabilities. [0003] The current microelectronic chip connects the vari...

AI Technical Summary

Problems solved by technology

The above methods of bonding provide a solution to integrate lasers on SOI substrates, but the bonding process itself has many defects, such as the inability to achieve submicron-level precise alignment and large-scale production

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