Silicon carbide Schottky diode

Abstract

The invention discloses a silicon carbide Schottky diode, which comprises a cathode metal layer, an N+type substrate, an N-type epitaxial layer, P-type regions, a compound metal layer, a metal thickening layer and passivation layers, wherein the N+type substrate is arranged on the cathode metal layer; the N-type epitaxial layer is arranged on the N+type substrate; the P-type regions are arranged in the N-type epitaxial layer and are in a flush type with the upper surface of the N-type epitaxial layer; the compound metal layer is arranged on the N-type epitaxial layer; the metal thickening layer is arranged on the compound metal layer; the passivation layers are arranged on two ends of the N-type epitaxial layer and cover the periphery of the metal thickening layer; the P-type regions are arranged at intervals; and the compound metal layer comprises high potential energy barrier metal regions arranged in the P-type region, and low potential energy barrier metal regions arranged in the intervals of the high potential energy barrier metal regions. By use of the silicon carbide Schottky diode, the P-type regions and the high potential energy barrier metal regions are in contact, the N-type epitaxial layer and the low potential energy barrier metal regions are in contact, the P-type regions and the N-type epitaxial layer adopt different contact metals, and the anti-surge capabilityof the silicon carbide Schottky diode is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a silicon carbide Schottky diode. Background technique [0002] Silicon carbide (SiC) Schottky diodes are multi-carrier conduction devices. Unlike silicon PiN diodes, which have a conductance modulation effect when they are forward-conducting, there is no unbalanced minority carrier in the drift region of SiC Schottky diodes to participate in conduction. Therefore, the reverse recovery speed of SiC Schottky diodes is fast, and the reverse recovery charge is extremely small, which is about 10% of that of silicon PiN diodes of the same level. Correspondingly, when SiC Schottky diodes are used in circuits The resulting loss is also reduced to less than 10%. [0003] For diodes, the forward surge current value is an important indicator to consider device performance. In the actual circuit, due to occasional reasons such as external signal interference and grid voltage...

AI Technical Summary

Problems solved by technology

[0005] An embodiment of the present invention provides a silicon carbide Schottky diode, aiming to solve the problem of low anti-surge capability of SiC Schottky diodes in the prior art

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