Manufacturing process of low-voltage low-leakage-current efficient protection chip
A technology for protecting chips and manufacturing processes, applied in the field of low-voltage, low-leakage, high-efficiency protection chip manufacturing processes, can solve problems affecting chip anti-interference performance, affecting low-voltage circuit stability, low-voltage circuit external interference, etc., to improve anti-surge Ability, enhance the ability to emit electrons, improve the effect of reliability
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[0028] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention.
[0029] see Figure 1 to Figure 2 , the present invention provides a technical solution: a low-voltage, low-leakage, high-efficiency protection chip manufacturing process, comprising the following steps:
[0030] S1, pre-diffusion treatment;
[0031] S2, oxidation;
[0032] S3, photolithography;
[0033] S4, double-sided open tube phosphorus deposition;
[0034] S5, open the tube to expand phosphorus;
[0035] S6, etching groove;
[0036] S7, electrophoretic passivation;
[0037] S8. Chip manufacturing is completed.
[0038] Step S1, in the pre-diffusion treatment, use a P-type single crystal silicon wafer, and perform chemical treatment on the surface of the s...
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