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Manufacturing process of low-voltage low-leakage-current efficient protection chip

A technology for protecting chips and manufacturing processes, applied in the field of low-voltage, low-leakage, high-efficiency protection chip manufacturing processes, can solve problems affecting chip anti-interference performance, affecting low-voltage circuit stability, low-voltage circuit external interference, etc., to improve anti-surge Ability, enhance the ability to emit electrons, improve the effect of reliability

Inactive Publication Date: 2020-10-30
江苏晟驰微电子有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the deficiencies of the existing technology, the present invention provides a low-voltage, low-leakage, high-efficiency protection chip manufacturing process, which solves the problem that the low-voltage circuit is easily affected by external interference during the use of the existing chip in the above-mentioned background technology, which affects the operation of the low-voltage circuit. The stability of the low-voltage circuit, as well as the leakage phenomenon of the low-voltage circuit, affects the anti-interference performance of the chip

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  • Manufacturing process of low-voltage low-leakage-current efficient protection chip

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Embodiment Construction

[0028] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention.

[0029] see Figure 1 to Figure 2 , the present invention provides a technical solution: a low-voltage, low-leakage, high-efficiency protection chip manufacturing process, comprising the following steps:

[0030] S1, pre-diffusion treatment;

[0031] S2, oxidation;

[0032] S3, photolithography;

[0033] S4, double-sided open tube phosphorus deposition;

[0034] S5, open the tube to expand phosphorus;

[0035] S6, etching groove;

[0036] S7, electrophoretic passivation;

[0037] S8. Chip manufacturing is completed.

[0038] Step S1, in the pre-diffusion treatment, use a P-type single crystal silicon wafer, and perform chemical treatment on the surface of the s...

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Abstract

The invention discloses a low-voltage low-leakage-current high-efficiency protection chip manufacturing process, relates to the technical field of chips, and particularly relates to a low-voltage low-leakage-current high-efficiency protection chip manufacturing process. The manufacturing process comprises the following steps of S1, diffusion pretreatment; S2, oxidation; S3, photoetching; S4, double-sided tube opening phosphorus deposition; S5, opening a pipe and expanding phosphorus; S6, etching the groove; S7, electrophoresis passivation; and S8, completing chip manufacturing. According to the low-voltage low-leakage-current high-efficiency protection chip manufacturing process, the surge resistance can be improved through the high-concentration N + layer on the surface of the chip, electric leakage can be reduced through channel diffusion, and reliability can be improved through a compact thin layer of electrophoresis; the chip adopts a mesa process, an N-type region depletion layerstructure is added, a concentration structure curve of an N-type diffusion region is changed, and the width of a P+ region is increased by utilizing additional withstand voltage of the width of the N-type diffusion region depletion layer, the high-conductivity region is widened, and the electron emission capability of the P+ region to the P base region is enhanced.

Description

technical field [0001] The invention relates to the field of chip technology, in particular to a low-voltage, low-leakage, high-efficiency protection chip manufacturing process. Background technique [0002] Chip, also known as microcircuit, microchip or integrated circuit. A chip is a small piece of silicon that contains an integrated circuit and is often part of a computer or other electronic device. After the transistor was invented and mass-produced, various solid-state semiconductor components such as diodes and transistors were widely used, replacing the function and role of vacuum tubes in circuits. In the middle and late 20th century, the progress of semiconductor manufacturing technology made integrated circuits possible. Compared with hand-assembled circuits using individual discrete electronic components, integrated circuits can integrate a large number of tiny transistors into a small chip, which is a huge improvement. The mass-manufacturability of integrated ...

Claims

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Application Information

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IPC IPC(8): H01L21/225H01L29/06
CPCH01L21/2252H01L29/0615H01L29/0638H01L29/0684
Inventor 崔文荣
Owner 江苏晟驰微电子有限公司
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