Method for improving cleanliness of dried silicon raw materials

Abstract

The invention discloses a method for improving cleanliness of dried silicon raw materials. The method is characterized by including the steps: placing the silicon raw materials into a basket to perform water bath cleaning; draining the silicon raw materials; drying the silicon raw materials in protective atmosphere or under the negative-pressure condition. The method for improving the cleanlinessof the dried silicon raw materials solves the problem that the quality of the existing silicon raw materials is reduced as impurities are repeatedly accumulated in the running process. According to the method for improving the cleanliness of the dried silicon raw materials, the silicon raw materials are cleaned, a lot of moisture in the silicon raw materials in the basket is drained by the basket,the basket helps an infrared insulation facility to compensate heat lost in the draining process of the raw materials, small-size raw materials are dried in protective atmosphere or under the negative-pressure condition, and oxidation or secondary pollution of the small-size raw materials caused by high-temperature drying of a hot-air oven is avoided, so that the cleanliness of the cleaned small-size (8-50mm) raw materials is improved.

Description

technical field [0001] The invention belongs to the technical field of single crystal silicon production by Czochralski single crystal method, and specifically relates to a method for improving the cleanliness of silicon raw materials after drying. Background technique [0002] In the single crystal production industry, the large-size thermal field has a large amount of feed, and it is necessary to input a large amount of small-size (8-50mm) raw materials multiple times. The small-size (8-50mm) raw materials require a large amount of raw materials, long running time, and non-silicon impurities in the raw materials. Repeated accumulation will lead to the deterioration of the quality of single crystal silicon. Since the production of monocrystalline silicon by the Czochralski method requires high cleanliness of raw materials, it is urgent to develop a new method of drying small-sized (8-50mm) raw materials to improve the cleanliness of small-sized raw materials and improve the...

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a method for improving the cleanliness of silicon raw materials after drying, which solves the problem that the quality of silicon raw materials is attenuated due to the accumulation of impurities in the existing silicon raw materials during the operation process.