Method for measuring 1MeV equivalent neutron flux of spalling neutron source on basis of grid control technology
A spallation neutron source and grid control technology, applied in the field of radiation detection, can solve the problem of limited means of equivalent neutron fluence and achieve high measurement accuracy
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[0045] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.
[0046] The gate-controlled lateral PNP transistor actually adds a control gate above the base oxide layer that is sensitive to radiation effects to form a PMOS structure, such as figure 1 shown. After the irradiation experiment, the concentration of interface state traps was obtained by measuring the base bias current at different gate voltages.
[0047] The influence of radiation damage on the base current of bipolar transistors mainly comes from the recombination of carriers in the bulk silicon and on the surface of the device, but the surface recombination is extremely related to the magnitude of the gate voltage. For PNP transistors, the positive oxide trap charges accumulate carriers at the interface, which weakens the role of interface state traps as recombination centers. When the gate voltage can reduce the influence of the oxide trap...
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