Terahertz detector and manufacturing method therefor

A terahertz detector and detection unit technology, applied in the field of terahertz detection, can solve the problems of low terahertz wave absorption efficiency, slow response to thermal effects, complex processing technology, etc., and achieve improved response sensitivity, strong angular adaptability, and working bandwidth. wide effect

Pending Publication Date: 2019-03-19
NUCTECH CO LTD +1
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  • Abstract
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  • Application Information

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Problems solved by technology

However, the channel materials of current terahertz detectors have low absorption efficiency for terahertz waves, slow response to thermal effects, and generally have problems such as insufficient gain magnification, complex processing technology, and difficulty in applying to terahertz wave bands.
In addition, conventional photopyroelectric detectors generally require terahertz fields to illuminate both sides of the channel material asymmetrically in order to obtain an asymmetric temperature field distribution, which severely limits their practicability and integrability.

Method used

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  • Terahertz detector and manufacturing method therefor
  • Terahertz detector and manufacturing method therefor
  • Terahertz detector and manufacturing method therefor

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Embodiment Construction

[0035] Although the present disclosure will be fully described with reference to the accompanying drawings containing preferred embodiments of the present disclosure, it should be understood before proceeding that those skilled in the art can modify the disclosure described herein while obtaining the technical effects of the present disclosure. Therefore, it should be understood that the above description is a broad disclosure for those of ordinary skill in the art, and its content is not intended to limit the exemplary embodiments described in the present disclosure.

[0036] In addition, in the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a comprehensive understanding of the embodiments of the present disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details. In other instances, well-known structures and devices are shown in diagrammatic form...

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Abstract

The invention discloses a terahertz detector and a manufacturing method therefor. The terahertz detector comprises a substrate and at least one detection unit. Each detection unit comprises a trench material, and the trench material is disposed on the substrate. The detector also comprises two electrodes which make ohmic contact with two ends of the trench material in the longitudinal direction; and three-dimensional graphene which makes direct or indirect thermal contact with the trench material. The detector provided by the invention takes the three-dimensional graphene as an absorbing body,thereby solving a problem that a trench material cannot sufficiently absorb the terahertz waves, and effectively improving the response sensitivity of the detector.

Description

technical field [0001] The present disclosure relates to the technical field of terahertz detection, in particular to a terahertz detector and a manufacturing method thereof. Background technique [0002] Terahertz wave is a general term for electromagnetic waves in a specific band, usually referring to electromagnetic waves with an oscillation frequency between 0.1 THz and 10 THz. Due to its special position in the electromagnetic spectrum, terahertz waves have the characteristics of good penetration, low single-photon energy, and rich spectral information. They have important application values ​​in security imaging, spectral detection, and information communication. [0003] At present, room-temperature terahertz detectors that are widely used include field effect tube detectors, Schottky detectors, and terahertz detectors. Schottky detectors and FET detectors can obtain higher detection sensitivity, but their spectral response range is limited to bands below 1 THz at pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L37/02G01J5/12
CPCG01J5/12G01J2005/126H10N15/15H10N15/10G01J5/34
Inventor 赵自然王迎新陈猛马旭明
Owner NUCTECH CO LTD
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