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Characterization method of magnetic change of antiferromagnetic material under stress action, characterization device and preparation method thereof

A technology of stress action and ferromagnetic materials, which is applied in the direction of antiferromagnetic materials, magnetic materials, magnetic objects, etc., can solve the problems of regulation and control that are rarely studied, and antiferromagnetic materials are difficult to characterize and difficult

Inactive Publication Date: 2019-03-22
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, we know that the net magnetic moment of antiferromagnetic materials is zero, and there is no response to external magnetic fields, so the changes of antiferromagnetic materials are difficult to characterize from the macroscopic magnetic field, and it is very difficult to directly detect the magnetic changes of antiferromagnetic materials. Little research has been done on the regulation of stress on antiferromagnetic materials

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  • Characterization method of magnetic change of antiferromagnetic material under stress action, characterization device and preparation method thereof
  • Characterization method of magnetic change of antiferromagnetic material under stress action, characterization device and preparation method thereof
  • Characterization method of magnetic change of antiferromagnetic material under stress action, characterization device and preparation method thereof

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Embodiment 1

[0043] In this embodiment, the device structure that characterizes the magnetic change of the antiferromagnetic material under stress is as follows figure 1 As shown, it is a multi-layer film structure, and from bottom to top are: deformation generating device 6 , substrate 4 , antiferromagnetic material layer 1 , ferromagnetic material layer 2 , and nonmagnetic layer 3 .

[0044] The substrate 4 is a flexible substrate, which is made of commercially purchased flexible and high temperature resistant copper foil.

[0045] The antiferromagnetic material layer 1 is composed of FeRh, which exhibits antiferromagnetism at room temperature.

[0046] The ferromagnetic material layer 2 is composed of amorphous CoFeB.

[0047] The non-magnetic layer 3 is made of Ta material and serves as a protective layer.

[0048] The preparation method of this device is as follows:

[0049] Step 1: select a commercially purchased flexible and high-temperature-resistant high-purity copper foil as t...

Embodiment 2

[0062] In this embodiment, the device structure that characterizes the magnetic change of the antiferromagnetic material under stress is as follows figure 2 As shown, it is a multi-layer film structure, from bottom to top: substrate 4 , antiferromagnetic material layer 1 , ferromagnetic material layer 2 , and nonmagnetic layer 3 , and the substrate 4 is connected to a voltage generating device 5 .

[0063] Substrate 4 adopts ferroelectric material Pb(Mg,Nb)O 3 -PbTiO 3 (PMNPT) composition, with inverse piezoelectric effect.

[0064] The antiferromagnetic material layer 1 is made of FeRh, and the FeRh material is antiferromagnetic at room temperature, and its magnetism changes under stress.

[0065] The ferromagnetic material layer 2 is composed of amorphous CoFeB.

[0066] The non-magnetic layer 3 is made of Ta material and serves as a protective layer.

[0067] The preparation method of this device is as follows:

[0068] Step 1: Select the ferroelectric material PMNPT ...

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Abstract

The invention provides a characterization method of a magnetic change of an antiferromagnetic material under the stress action. The characterization method specifically comprises the following steps:arranging a ferromagnetic material on the surface of the antiferromagnetic material, and coupling the ferromagnetic material with the antiferromagnetic material; and providing stress for the antiferromagnetic material, wherein the magnetic property of the antiferromagnetic material change under the stress action, and the magnetic property of the ferromagnetic material also change due to the coupling action, so that the magnetic change of the antiferromagnetic material under the stress action is inducted by measuring the change of the magnetic property of the ferromagnetic material. The characterization method can be used to obtain a magnetic property change rule of the antiferromagnetic material under the stress action, and the magnetic property regulation of the antiferromagnetic materialcan be realized by regulating the stress accordingly. The invention also provides a characterization device which is of a multilayer film structure in turn comprising a substrate layer, an antiferromagnetic material layer, a ferromagnetic material layer and a protective layer, and the characterization device has the advantages of simple structure and convenience in characterization.

Description

technical field [0001] The invention relates to the technical field of antiferromagnetic materials, in particular to a characterization method for magnetic changes of antiferromagnetic materials under stress, a characterization device and a preparation method thereof. Background technique [0002] Magnetic materials (ferromagnetic / antiferromagnetic) are an important part of the preparation of electronic devices. The preparation of magnetic thin films on flexible substrates and the study of their magnetoelectric properties are an important basis for the development of flexible magnetic electronic devices. In the actual use process, magnetoelectronic devices will inevitably be affected by stress. Therefore, studying the properties of magnetic materials under stress plays a very important role in the development of flexible magnetoelectric materials and devices. [0003] So far, there have been many reports on the research on the change law of ferromagnetic materials under stre...

Claims

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Application Information

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IPC IPC(8): G01R33/00G01R33/12H01F1/00
CPCG01R33/0052G01R33/12H01F1/0009
Inventor 谢亚丽李润伟詹清峰王保敏盛萍
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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