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Chemical preparation method of multiferroic BiFeO3 doped film

A multiferroic and thin-film technology, applied in chemical instruments and methods, inorganic chemistry, iron compounds, etc., can solve problems such as large leak conductance, unobservable remnant polarization, uncontrollable, etc.

Active Publication Date: 2015-01-07
BEIHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The biggest disadvantage of preparing BFO thin films by chemical method is that the defects cannot be controlled, resulting in large leak conduction, and the inherent high remnant polarization cannot be observed.

Method used

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  • Chemical preparation method of multiferroic BiFeO3 doped film
  • Chemical preparation method of multiferroic BiFeO3 doped film
  • Chemical preparation method of multiferroic BiFeO3 doped film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Step 1: Ethylene glycol methyl ether and propionic acid are prepared as a solvent in a volume ratio of 3:1, which is used as the solvent in the subsequent sol preparation step.

[0023] Step 2: Parent phase BiFeO 3 Sol preparation: bismuth nitrate (Bi(NO 3 ) 3 ·6H 2 O), iron nitrate ((FeNO 3 ) 3 ·6H 2 O) and citric acid are dissolved in the solvent prepared in step 1 according to the cationic molar ratio of 1:1.5 to prepare BiFeO 3 The sol is BFO sol, and the sol concentration is 0.2mol / L.

[0024] Step 3: Doping phase BaTiO 3 Preparation of sol: After tetrabutyl titanate is dissolved in the solvent prepared in step 1 to form a stable sol, barium acetate (Ba(Ac) 2 ) and citric acid, tetrabutyl titanate, barium acetate and citric acid are formulated according to the cation molar ratio of 1:1.5 to form BaTiO 3 The sol is BTO sol, and the sol concentration is 0.2mol / L.

[0025] Step 4: the purchased Pt / Ti / SiO 2 The / Si substrate was cleaned sequentially with dei...

Embodiment 2

[0031] Step 1: Ethylene glycol methyl ether and propionic acid are prepared as a solvent in a volume ratio of 3:1, which is used as the solvent in the subsequent sol preparation step.

[0032] Step 2: Parent Phase BiFeO 3 Sol preparation: bismuth nitrate (Bi(NO 3 ) 3 ·6H 2 O), iron nitrate ((FeNO 3 ) 3 ·6H 2O) and citric acid are dissolved in the solvent prepared in step 1 according to the cationic molar ratio of 1:1.5 to prepare BiFeO 3 The sol is BFO sol, and the sol concentration is 0.2mol / L.

[0033] Step 3: Doping phase BaTiO 3 Preparation of sol: After tetrabutyl titanate is dissolved in the solvent prepared in step 1 to form a stable sol, barium acetate (Ba(Ac) 2 ) and citric acid, tetrabutyl titanate, barium acetate and citric acid are formulated according to the cation molar ratio of 1:1.5 to form BaTiO 3 The sol is BTO sol, and the sol concentration is 0.2mol / L.

[0034] Step 4: the purchased Pt / Ti / SiO 2 The / Si substrate was cleaned sequentially with deio...

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Abstract

The invention discloses a chemical preparation method of a multiferroic BiFeO3 doped film. The method comprises the following eight steps of: firstly, preparing a basic solvent by using ethylene glycol monomethyl ether and propionic acid according to the volume ratio of 3:1; secondly, preparing parent-phase BiFeO3 (BFO) sol; thirdly, preparing doping phase BaTiO3 (BTO) sol; fourthly, cleaning and treating a Pt / Ti / SiO2 / Si substrate; fifthly, placing the Pt / Ti / SiO2 / Si substrate on a uniform sol coating machine, spin-coating a layer of BFO sol and drying; sixthly, spin-coating a layer of BTO sol on a wet BFO film and drying; seventhly, repeating the fifth and sixth steps to obtain BFO films with different Ba and Ti doping contents; and eighthly, sputtering platinum poles on the BFO films with different Ba and Ti doping contents. The way that cation salt of a doped element is directly added into a parent-phase solution to form entire sol to be spin-coated to form a film is not adopted; but the way that a dopant phase and a parent are respectively prepared into the sols, the sols are separately spin-coated, and solid solution doping is formed through the mutual movement of ions in the thermal treatment process. The chemical preparation method has a better application prospect in the technical field of new materials.

Description

technical field [0001] The invention relates to a doped multiferroic BiFeO 3 The chemical preparation method of the thin film is a thin film technology using a chemical solution to control the composition and a class of multiferroic materials with large ferroelectric polarization and magnetic polarization prepared by using the technology, belonging to the technical field of new materials. Background technique [0002] BiFeO 3 (BFO) is a multiferroic material with both ferroelectricity and antiferromagnetism, and the remanent polarization (P r ) up to ~100μC / cm 2 , and the BFO film exhibits Dzyaloshinskii–Moriya weak magnetism, and the magnetic strength is closely related to its sublattice structure. At present, in order to obtain better properties of BFO thin films, most of them are deposited by physical methods, such as: laser pulse deposition, metal organic chemical vapor deposition, molecular beam epitaxy, magnetron sputtering, etc.; these methods require expensive and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G49/00B32B15/04
Inventor 王瑶陈静怡李静邓元
Owner BEIHANG UNIV
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