15results about "Antiferromagnetic materials" patented technology

An anisotropic electroconductive film and an electroconductive connector that make it possible to achieve lower resistance than the prior art, improved highfrequency characteristics and higher resolution, improved contact stability due to reduced contact pressure, increased electrical current capacity, and improved durability are provided. An anisotropic electroconductive film 110 includes an electrically insulative thin film 112 made of an elastic polymer material, and particles 200 made of a substance exhibiting topological antiferromagnetic properties, which are dispersed in the electrically insulative thin film 112 and which are given magnetic anisotropy so that an easy direction of magnetization is in a thickness direction of the electrically insulative thin film 112. The particles 200 form conduction portions 114 which are arranged at intervals in an in-plane direction of the electrically insulative thin film 100 for enabling electrical conduction along the thickness direction thereof. Each conduction portion 114 is formed by the single particle 200 (or the particles 200 aligned in the thickness direction). Each particle 200 has a south pole region 604 and a north pole region 602 formed respectively at two ends thereof along the easy direction of magnetization, and the south pole region and the north pole region are subject to concentration of magnetic flux of virtual magnetic fields.

The present invention relates to the field of magnetic perovskite materials. Sulfide perovskites have advantages such as high stability and good carrier transport characteristics. By appropriate doping or alloying with magnetic ions, they can become dilute magnetic semiconductors, showing both semiconductor and magnetic characteristics. However, doping and alloying are prone to problems such as phase separation. To solve the above problems, the present invention discloses a sulfide perovskite material with antiferromagnetic properties and its preparation method, including the following steps: weighing raw materials HfS2 and EuS in a molar ratio of 1:1; grinding, mixing, and pressing the above raw materials into flakes; carrying out a solid-state reaction on the above flake mixture in a CS2 protection atmosphere at 1300 °C for 6 hours to obtain a single pure-phase EuHfS3 sulfide perovskite material. This material exhibits good crystallinity, unique antiferromagnetic characteristics, and high conductivity, and can be widely applied in magnetic storage and spintronic devices.

The invention provides an anisotropic conductive film and a conductive connector which can realize low resistance, improvement of high-frequency characteristics, high resolution, improvement of contact stability caused by reduction of contact pressure, high current and improvement of durability compared with the prior art. The anisotropic conductive film (110) is provided with: an insulating film (112) comprising an elastic polymer material; and particles (200) which are dispersed in the insulating film (112) and which have magnetic anisotropy such that the easy magnetization direction becomes the thickness direction thereof, and which comprise a substance having topological antiferromagnetic properties. The particles (200) form a plurality of conductive parts (114) which are arranged at intervals in the in-plane direction of the insulating film (100) and are capable of conducting in the thickness direction thereof, and each of the conductive parts (114) is formed of a single particle (or a plurality of particles arranged in the thickness direction). Each of the particles (200) has a south pole region (604) and a north pole region (602) formed at both end portions in a direction along the easy magnetization direction, respectively, and the magnetic flux of the virtual magnetic field is concentrated in the south pole region (604) and the north pole region (602).

The invention discloses an antiferromagnetic metal single crystal with a three-dimensional stacking ordered structure and a preparation method of the antiferromagnetic metal single crystal. The preparation method comprises the following steps: uniformly mixing Fe powder, Co powder, Ge powder and Te powder, and then loading the mixture into a quartz tube together with a transport agent; putting the sealed quartz tube into a double-temperature-zone tubular furnace for calcining to obtain the antiferromagnetic metal single crystal; a unit cell of the antiferromagnetic metal single crystal is formed by stacking a plurality of layer structures layer by layer, and each layer structure is provided with two Te layers, a Ge layer and a Fe / Co layer, wherein the Ge layer and the Fe / Co layer are respectively positioned between the two Te layers; the plurality of layer structures are grouped in pairs to form a plurality of layer groups which are sequentially stacked, the two layer structures in the same layer group are in an AA stacking mode, and the two layer structures in the two adjacent layer groups are in an ordered staggered stacking mode. The antiferromagnetic metal single crystal has the characteristics of good cruising antiferromagnetism, neel temperature higher than room temperature, three-dimensional stacking ordered structure and the like, and promotes the development of related fields.

The present invention provides a technique suitable for manufacturing a thermoelectric conversion element with high productivity, which uses the abnormal Nernst effect and obtains a high Nernst coefficient in a zero magnetic field. The present invention relates to a metal powder having an intermetallic compound GdCo5 as a main component, the metal powder having a 50% cumulative particle diameter D50 of 1-150 [mu] m and a 90% cumulative particle diameter D90 of 250 [mu] m or less in a volume-based particle size distribution obtained by a laser diffraction scattering method. The metal powder can be obtained, for example, by pulverizing an alloy block mainly composed of an intermetallic compound GdCo5.

The present invention discloses a nanocrystalline magnetic material and a preparation method thereof. The material is a magnetic Nb3VSe6 crystal, which contains three elements, namely Nb, V, and Se. The stoichiometric molar ratio of the three elements is 3:1:6. The crystal has a centrosymmetrically broken hexagonal layered structure, and its space group is P6322. The V atoms are inserted between two 2H-NbS2 hexagonal layers, with lattice constants a = b = 5.738 Å and c = 12.018 Å. The magnetism in the material is mainly contributed by trivalent Cr ions, with a magnetic moment of 3 μB and a local electron spin S = 3 / 2, while the conduction electrons originate from the unfilled band of Nb atoms. Due to its unique crystal structure and electronic properties, the material exhibits potential application value in multiple fields, especially in high-frequency devices, spintronic components, and magnetic dampers, etc. The Nb3VSe6 single crystal is relatively stable in air, which is a great advantage for practical applications.

The application relates to the technical field of magnetoelectric ceramic materials, in particular to a tungstate manganese hafnium ceramic material based on vacancy and chemical disorder regulation and a preparation method and application thereof. 1‑x Hf x WO4, wherein the hafnium doping amount ranges from 0 < x <= 0.20; in the tungstate manganese hafnium ceramic material Mn 1‑x Hf x WO4, the Hf 4+ Mn 2+ is replaced to introduce vacancy defects and chemical disorder, so as to regulate the magnetoelectric performance of the tungstate manganese hafnium ceramic; the prepared Mn 1‑x Hf x WO4 magnetoelectric ceramic material has a single-phase structure, excellent dielectric performance, significantly improved magnetic transition temperature, expanded ferroelectric polarization temperature range, and obvious magnetic dielectric characteristics, and has very excellent characteristics.

The present disclosure concerns a magnetoresistive element (10) for a magnetic sensor, the magnetoresistive element (10) comprising a tunnel barrier layer (22) included between a reference layer (21) having a fixed reference magnetization (210) and a sense layer (23) having a free sense magnetization (230), wherein the sense magnetization (230) comprises a stable vortex configuration. The magnetoresistive element (10) further comprises a reference pinning layer (24) in contact with the reference layer (21) and pining the reference magnetization (210) by exchange-bias at a first blocking temperature (Tb1). The magnetoresistive element (10) further comprises a sense pinning layer (25) in contact with the sense layer (23) and pining the sense magnetization (230) by exchange-bias at a second blocking temperature (Tb2) lower that the first blocking temperature (Tb1). The present disclosure concerns a method for manufacturing the magnetoresistive element.

A magnetoresistive element for a magnetic sensor that can be used in a magnetic field higher than conventional magnetic fields is provided. The present disclosure relates to a magnetoresistive element (10) for a magnetic sensor, the magnetoresistive element (10) comprising a tunnel barrier layer (22) disposed between a reference layer (21) having a fixed reference magnetization (210) and a sense layer (23) having a free sense magnetization (230), where the sense magnetization (230) comprises a stable vortex configuration. The magnetoresistive element (10) further comprises a reference pinning layer (24) in contact with the reference layer (21) and configured to pin the reference magnetization (210) by exchange bias at a first blocking temperature (Tb1). The magnetoresistive element (10) further comprises a sense pinning layer (25) in contact with the sense layer (23) and configured to pin the sense magnetization (230) by exchange bias at a second blocking temperature (Tb2) lower than the first blocking temperature (Tb1). The present invention relates to a method for manufacturing a magnetoresistive effect element.

A magnetic plate may be provided by a device, comprising: a first magnet, a second magnet, and a third magnet; a plate defining: a first indentation in which the first magnet is disposed; a second indentation in which the second magnet is disposed; and a third indentation in which the third magnet is disposed; and a contact surface; and, a target area; wherein: the first indentation, the second indentation, and the third indentation are located on the plate relative to a target area of the plate so that a net magnetic field generated by the first magnet, second magnet, and third magnet has a field strength that is below a predefined threshold within the target area. A keying feature may be provided so as to prevent misalignment between the plate and a device to which it can be magnetically connected.

The disclosure is directed to an iron-nitride material having a polycrystalline microstructure including a plurality of elongated crystallographic grains with grain boundaries, the iron-nitride material including at least one of an α″-Fe16N2 phase and a body-center-tetragonal (bct) phase comprising Fe and N. The disclosure is also directed a method producing an iron-nitride material. The method includes some combinations of preparing a raw material comprising iron, carrying out a microstructure build-up by annealing the prepared raw material at an elevated temperature and subsequently quenching the prepared raw material to produce a microstructure build-up material, annealing the microstructure build-up material, reducing the microstructure build-up material in a hydrogen environment, nitriding the reduced material to produce a nitrided material and subsequently quenching the nitrided material to a martensitic transformation temperature, stress annealing the nitrided material, and magnetic field annealing the stress-annealed material.

Provided are an anisotropic electroconductive film and an electroconductive connector that are capable of achieving lower resistance, higher frequency characteristics, higher resolution, higher contact stability resulting from reduction of contact pressure, higher current, and higher durability than in the past.　An anisotropic electroconductive film 110 includes: an insulating thin film 112 made of a polymer material having elasticity; and particles 200 that are dispersed in the insulating thin film 112 and are imparted with magnetic anisotropy so that the easy magnetization direction of the particles 200 is in the thickness direction of the insulating thin film 112, the particles 200 being made of a substance exhibiting topological antiferromagnetic characteristics. The particles 200 are arranged apart from each other in the in-plane direction of the insulating thin film 100, the particles 200 forming a plurality of conduction parts 114 capable of conducting in the thickness direction. Each conduction part 114 is formed from a single particle 200 (or a plurality of particles 200 arranged in the thickness direction). Each of the particles 200 has a south-pole region 604 and a north-pole region 602 formed at two ends in a direction following the easy magnetization direction. The magnetic flux of a virtual magnetic field is concentrated at the south-pole region 604 and the north-pole region 602.

The invention discloses a BiFeO3 / CoFe2O4 two-dimensional single-crystal heterojunction multiferroic material, a hydrothermal preparation method and application. The hydrothermal preparation method comprises the following steps: 1) preparing oxyhydroxide precipitate suspension containing iron and cobalt; (2) adding bismuth ferrite single crystal nanosheets and a mineralizer into the suspension, and uniformly stirring to obtain a reaction material; (3) transferring the reaction materials into a reaction kettle inner container, adjusting the reaction materials in the reaction kettle inner container by using deionized water, and uniformly stirring; (4) putting the reaction kettle inner container into a reaction kettle, sealing, and carrying out hydrothermal treatment; and 5) naturally cooling the reaction kettle to room temperature, repeatedly washing the reaction product with deionized water and absolute ethyl alcohol, filtering and drying to obtain the BiFeO3 / CoFe2O4 two-dimensional single crystal heterojunction multiferroic material.According to the preparation method of the BiFeO3 / CoFe2O4 two-dimensional single crystal heterojunction multiferroic material, cobalt ferrite can be in a film shape on a single crystal bismuth ferrite micron sheet, so that the magnetism of bismuth ferrite is improved.

The invention relates to the technical field of materials, in particular to a tetranuclear gadolinium-based magnetocaloric material and a preparation method thereof. The molecular formula of the tetranuclear gadolinium-based magnetocaloric material is C40H44Cl4Gd4N28O12, the chemical formula of the tetranuclear gadolinium-based magnetocaloric material is [[Gd4 (L) 4 (mu2-N3) 4 (Cl) 4], and L is (E)-2-(hydroxylamino)-N '-((6-methoxypyridine-2-yl) methylene) propanohydrazide without one proton. The tetranuclear gadolinium-based magnetocaloric material crystal disclosed by the invention belongs to a triclinic system and a P-1 space group, and cell parameters are as follows: a is equal to 11.5828 (7), b is equal to 17.3200 (10), c is equal to 18.4552 (11), alpha is equal to 86.047 (3) degrees, beta is equal to 79.424 (3) degrees, gamma is equal to 86.413 (3) degrees, and V is equal to 3626.1 (4) 3. The tetranuclear gadolinium-based magnetocaloric material has large magnetic entropy change and can be used as a magnetic refrigeration material, and the preparation method is easy and convenient to operate, good in reproducibility and high in product purity.

[Problem] To provide a technique suitable for producing, with high productivity, a thermoelectric conversion element that utilizes an anomalous Nernst effect to obtain a high Nernst coefficient in a zero magnetic field. [Solution] A metallic powder which is a powder containing an intermetallic compound GdCo5 as a main component, and has a cumulative 50% particle diameter D50 of 1 to 150 µm and a cumulative 90% particle diameter D90 of 250 µm or less in a volume-based particle size distribution as determined by a laser diffraction / scattering method. This metallic powder can be obtained, for example, by pulverizing an alloy ingot containing an intermetallic compound GdCo5 as a main component.