Method for regulating and controlling magnetic moment arrangement of antiferromagnetic film material

Abstract

The invention discloses a method for regulating and controlling magnetic moment arrangement of an antiferromagnetic film material, which belongs to the technical field of information storage and sensing. The method comprises the following steps: pre-stretching treatment, surface polishing and surface argon ion bombardment treatment are carried out on an titanium-nickel-niobium TiNiNb shape memoryalloy substrate; then, a tantalum Ta / ferronickel NiFe / ferro-manganese FeMn / tantalum Ta multilayer film is deposited on the TiNiNb memory alloy substrate; and after the deposition is finished, heat treatment is carried out in a vacuum environment and simultaneously a magnetic field is applied, and finally cooling is carried out to room temperature. The principle is as follows: a remarkable latticestrain is generated through inverse martensite phase transformation of the temperature control TiNiNb substrate and acts on the multilayer film, and an exchange spring structure at a NiFe / FeMn interface can be controlled through the strain, so that the Neel vector rotation of FeMn is caused, and the magnetic moment arrangement of FeMn is effectively regulated and controlled. According to the invention, the structure of an exchange spring can be adjusted through simple temperature control, so that effective regulation and control of FeMn magnetic moment arrangement are realized, and the methodhas the advantages of simple preparation, convenient control, low energy consumption, high efficiency, low cost and the like.

Description

technical field [0001] The invention belongs to the field of information storage and sensing technology, and relates to a control method for the magnetic moment arrangement of the key core material in the above-mentioned field—an antiferromagnetic thin film material, and in particular provides a method for adjusting the exchange of ferromagnetic / antiferromagnetic interfaces through stress The spring structure, and then the method of adjusting the magnetic moment arrangement of the antiferromagnetic thin film material. Background technique [0002] Compared with ferromagnetic (FM) materials, antiferromagnetic (AFM) materials have a strong ability to resist magnetic field interference, do not generate stray fields, and have a small damping factor and thus exhibit ultrafast spin dynamics. The advantages of these characteristics make AFM materials gradually become the core functional materials in spintronic devices, such as antiferromagnetic based storage resistors, tunneling an...

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Problems solved by technology

At present, most of the research work is to directly adjust the crystal structure of AFM materials through strain, such as lattice constant, crystal orientation or phase composition, etc., and then adjust its magnetic moment arrangement [Nat.Mater.18(2019) 931; Nat.Nanotechnol .14(2019)131], but the reported strain control methods are only applicable to some special materials, such as Mn with large spin-orbit coupling 2 Au and FeRh alloys with different magnetic phase characteristics are difficult to be universally applied to commonly used AFM materials such as FeMn, IrMn, etc.

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