Ultra-wideband switching absorber based on PIN diode
A technology of PIN diodes and absorbers, applied in the field of ultra-broadband switchable absorbers, to achieve the effect of wide coverage of the working frequency band and simple feeding methods
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[0021] The present invention will be further described below in conjunction with drawings and embodiments.
[0022] The present invention provides an ultra-broadband switchable wave absorber based on PIN diodes, which are wave absorbing layer 1, switch layer 2 and bottom plate layer 3 from top to bottom; the wave absorber has a periodic structure, and the periodic unit structure is as follows figure 1 shown.
[0023] The absorbing layer 1 is composed of a first dielectric substrate 11 and a plurality of split resonant ring structures 12 periodically attached to the upper surface of the first dielectric substrate; in the embodiment, the first dielectric substrate adopts an FR4 substrate (dielectric constant 4.4, loss angle Tangent 0.007), different types of substrate materials with a dielectric constant range of 4.0-5.0 can also be substituted, and the thickness of the first dielectric substrate is 0.5mm
[0024] Such as figure 2 As shown, the split resonant ring structure 1...
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