Electrostatic discharging protection circuit and structure and working method of electrostatic discharging protection circuit

A technology for electrostatic discharge protection and circuits, applied in circuits, electrical components, electric solid devices, etc., can solve problems such as poor stability of electrostatic protection circuits, and achieve the effect of improving performance

Active Publication Date: 2019-04-09
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the existing electrostatic protection circuit has the disadvantage of poor stability

Method used

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  • Electrostatic discharging protection circuit and structure and working method of electrostatic discharging protection circuit
  • Electrostatic discharging protection circuit and structure and working method of electrostatic discharging protection circuit
  • Electrostatic discharging protection circuit and structure and working method of electrostatic discharging protection circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0046] There are many problems in the high-voltage electrostatic discharge circuit in the prior art, for example, the stability of the high-voltage electrostatic discharge circuit is poor.

[0047] Combined with a high-voltage electrostatic discharge protection circuit, the reasons for the poor stability of the existing electrostatic discharge protection structure are analyzed:

[0048] figure 1 It is a circuit diagram of a high-voltage electrostatic discharge protection circuit.

[0049] Please refer to figure 1 , the high-voltage electrostatic discharge protection circuit includes: a first circuit, the first circuit includes a first input end and a first output end, the first circuit includes a plurality of first MOS transistors 110 connected in series, the first The source region of the MOS transistor is connected to the gate, and the two ends of the first MOS transistors 110 connected in series are respectively connected to the first input terminal and the first output t...

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PUM

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Abstract

The invention provides an electrostatic discharging protection circuit and structure and a working method of the electrostatic discharging protection circuit. The circuit comprises a first circuit anda second circuit, wherein the first circuit comprises a first MOS transistor, a first resistor and a first capacitor, two ends of the first resistor are respectively connected with a source and a gate of the first MOS transistor, two ends of the first capacitor are respectively connected with the gate and a drain of the first MOS transistor, the second circuit comprises a second MOS transistor, asecond resistor and a second capacitor, two ends of the second resistor are respectively connected with a gate and a source of the second MOS transistor, and two ends of the second capacitor are respectively connected with a drain and the gate of the second MOS transistor. The sustaining voltage of the electrostatic discharging circuit is relatively high, so that the electrostatic discharging circuit can be closed after electrostatic discharging, and the normal working of a chip needed to be protected is difficult to affect; and meanwhile, a trigger voltage of the electrostatic discharging protection circuit is relatively low, so that the electrostatic discharging protection circuit is easy to conduct, and the protection performance of the chip needed to be protected can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an electrostatic discharge protection circuit and its structure and working method. Background technique [0002] Static electricity is an objectively existing natural phenomenon, which can be produced in many ways, such as contact, friction, induction between electrical appliances, etc. Static electricity has the characteristics of long-term accumulation, high voltage, low power, low current and short action time. [0003] For electronic products, electrostatic discharge (Electrostatic discharge, ESD) is a major factor affecting the reliability of integrated circuits. Electrostatic discharge is a rapid neutralization process of electric charge. Because the electrostatic voltage is very high, it will bring destructive consequences to the integrated circuit, resulting in the failure of the integrated circuit. Therefore, in order to protect the integrated cir...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/60H01L27/02
CPCH01L23/60H01L27/0248
Inventor 谷欣明陈捷王妉
Owner SEMICON MFG INT (SHANGHAI) CORP
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