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Thin film transistor structure and measurement method of channel resistance and contact resistance

A thin film transistor and contact resistance technology, which is used in grounding resistance measurement, resistance/reactance/impedance measurement, semiconductor/solid-state device testing/measurement, etc. question

Active Publication Date: 2020-10-30
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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Problems solved by technology

[0006] The traditional method of calculating contact resistance is Transfer Length Measurement (TLM), which is to measure multiple thin film transistors with different channel lengths, calculate the total resistance, and then calculate the intercept of the resistance and the y-axis Defined as twice the contact resistance, the contact resistance can be obtained. The limitation is that it is necessary to design multiple sets of thin film transistors with different channel lengths on the mask, and measure multiple sets of data for calculation and fitting. The measurement is cumbersome, and due to the uncertainty of the fitting, the contact resistance cannot be accurately calculated

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  • Thin film transistor structure and measurement method of channel resistance and contact resistance
  • Thin film transistor structure and measurement method of channel resistance and contact resistance
  • Thin film transistor structure and measurement method of channel resistance and contact resistance

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Embodiment Construction

[0036] In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings.

[0037] see figure 1 with figure 2 or image 3 with Figure 4 , the present invention provides a thin film transistor structure, comprising: a substrate 1, a gate 2 disposed on the substrate 1, a gate insulating layer 3 disposed on the gate 2, a gate insulating layer 3 disposed on the The active layer 4 on the gate insulating layer 3 and the source electrode 5, the measuring electrode 6 and the drain electrode 7 arranged at intervals in sequence on the active layer 4;

[0038] The distance between the measuring electrode 6 and the source 5 is different from the distance between the measuring electrode 6 and the drain 7 .

[0039] Specifically, the thin film transistor structure of the present invention is conducive to measuring channel res...

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Abstract

A thin film transistor structure and a method for measuring a channel resistance and a contact resistance. The thin film transistor structure comprises a substrate (1), a gate (2) provided on the substrate (1), a gate insulating layer (3) provided on the gate (2), an active layer (4) provided on the gate insulating layer (3), and a source (5), a measuring electrode (6), and a drain (7) successively arranged on the active layer (4) at intervals; and the interval distance between the measuring electrode (6) and the source (5) is different from the interval distance between the measuring electrode (6) and the drain (7). By providing the measuring electrode (6) on the active layer (4), and then by measuring the voltage on the measuring electrode (6) and the current flowing through the drain (7), the channel resistance (R1) and the contact resistance (R2) of the thin film transistor are determined, and thus the measurement of the channel resistance (R1) and the contact resistance (R2) of the thin film transistor can be completed rapidly and accurately by means of one single thin film transistor.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor structure and a method for measuring channel resistance and contact resistance. Background technique [0002] With the development of display technology, flat panel display devices are widely used in mobile phones, televisions, personal digital assistants, digital cameras, notebook computers, desktops, etc. Various consumer electronic products such as computers have become the mainstream of display devices. [0003] The active matrix (Active Matrix, AM) flat panel display device is currently the most commonly used display device, and the active matrix flat panel display device controls the input of data signals through a thin film transistor switch (Thin Film Transistor, TFT), and then controls the screen. show. [0004] The current display technology is constantly developing in the direction of high resolution. For example, the resolution of mobile phon...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66H01L23/544G01R27/20G01R27/08
CPCG01R27/08G01R27/205H01L22/14H01L22/34
Inventor 朱茂霞
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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