A kind of graphene photodetector and preparation method thereof

Abstract

The invention discloses a graphene photodetector and a preparation method thereof. The graphene photodetector comprises a substrate, a light input end, a light output end and an optical waveguide structure, wherein the directions of length, width and height of the substrate are respectively defined as X, Y and Z directions; the light input end and the light output end are arranged on the substrateat intervals in the X direction; the optical waveguide structure is located between the light input end and the light output end, and the optical waveguide structure comprises a first metal electrode, a refractive index layer and a second metal electrode that are arranged on the substrate and a graphene layer arranged on the surface of the high refractive index layer, wherein the first metal electrode, the refractive index layer and the second metal electrode are sequentially arranged and connected in the Y direction; the refractive index layer comprises a first low refractive index layer, ahigh refractive index layer and a second low refractive index layer which are sequentially arranged and connected in the Y direction, two ends of the high refractive index layer are respectively connected with the light input end and the light output end, and two ends of the graphene layer extend along the Y direction to respectively cover the first metal electrode and the second metal electrode.According to the scheme of the invention, the detection responsiveness and the photoelectric detection bandwidth can be improved.

Description

technical field [0001] The invention relates to the technical field of photodetectors, in particular to a graphene photodetector and a preparation method thereof. Background technique [0002] In optoelectronic integrated circuits, the optical detector is one of the core integrated devices at the receiving end, which converts high-speed optical data into electrical signals. Optical detectors use materials with pyroelectric effect, photoelectric effect, and electroabsorption effect to detect the amplitude of light. Commonly used material systems include III-V materials (InP) and silicon germanium (Si / Ge). [0003] As a new type of material, graphene has excellent optoelectronic properties, such as broadband photoresponse, strong interaction with light, ultrafast carrier mobility, etc., combined with the optical waveguide structure of silicon-based materials, it can realize the ultra-wideband, high-responsivity detection. The basic principle of ultra-broadband, high-respons...

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Problems solved by technology

[0004] At present, detectors based on these material systems have achieved good performance and have been commercialized, but there are still shortcomings, such as low detection responsivity, low bandwidth, complex preparation process, and high cost.

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