Voltage stabilizer circuit applied to a three-dimensional memory and the three-dimensional memory

Abstract

The invention discloses a voltage stabilizer circuit applied to a three-dimensional memory and the three-dimensional memory. The voltage stabilizer circuit applied to the three-dimensional memory is composed of an amplification module, a first transistor, a first capacitor and a feedback voltage division module, the amplification module is used for carrying out primary amplification on voltage toobtain differential amplification voltage, and the differential amplification voltage is subjected to secondary amplification of the first transistor to form output voltage to be output; An isolationunit is arranged in the amplification module; Therefore, the voltage stabilizer circuit applied to the three-dimensional memory works at high frequency; the condition that the source end of the firsttransistor is short-circuited to the gate end of the first transistor to form a diode connection structure can be avoided; Therefore, the condition that the power supply noise for providing the working voltage is directly output by the diode connection structure through the diode connection structure is avoided, the power supply noise can be filtered by the isolation unit and the first transistor,and the power supply rejection ratio of the voltage stabilizer circuit is improved.

Description

technical field [0001] The present application relates to the technical field of circuit design, and more specifically, relates to a voltage regulator circuit applied to a three-dimensional memory and a three-dimensional memory. Background technique [0002] Memory is a memory device used to save information in modern information technology. With the increasing demand for integration and data storage density of various electronic devices, it is difficult for ordinary two-dimensional memory to further improve its integration and data storage density. Therefore, three-dimensional (3D) memory has emerged as the times require. [0003] A three-dimensional memory usually consists of a memory cell array (or memory cell) formed on a substrate and a peripheral circuit connected to the memory cell array. The peripheral circuit includes a variety of different charge pumps (Charge Pump) and a variety of different Regulator (Regulator) circuit, different charge pumps generate different...

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Problems solved by technology

At the same time, the charge pump is used as the power supply, the output voltage ripple is relatively large, and the frequency is relatively high

In addition, because the external power supply wiring needs to be spread throughout the entire chip layout, the impact of external noise is greater, and the voltage loss on the metal line is greater

These factors will seriously affect the output voltage of the voltage regulator circuit, and increase the difficulty of the circuit framework and specific design, so it is necessary to improve the power supply rejection ratio (PowerSupply Rejection Ratio, PSRR) of the voltage regulator in the prior art

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