Infrared focal plane array
An infrared focal plane and array technology, applied in the field of infrared focal plane arrays, can solve problems such as different power supply voltages and uneven images of focal plane arrays
Active Publication Date: 2019-04-23
WUHAN GUIDE INFRARED CO LTD
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[0005] In view of the above defects or improvement needs of the prior art, the present invention provides an infrared focal plane array, the purpose of which is to solve the unevenness of the focal plane array image caused by the different power supply voltages between the pixels on the edge of the infrared focal plane array and the intermediate pixels. technical issues
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[0043] Hereinafter, the present invention will be further described by taking an infrared focal plane array of HgCdTe material (the material of the epitaxial wafer) with 800×600 pixels and a pixel distance of 15 μm as an example.
[0044] In the traditional process, the current of each pixel is input by the common electrode located at the edge of the array, and then transmitted to the pixel through the HgCdTe epitaxial wafer semiconductor material. Usually, the thickness of the epitaxial wafer material is 10-20 μm, and the resistance from the edge of the infrared focal plane array to the center of the focal plane array is more than hundreds of ohms. The working voltage should be lower than 0.12V. Since the pixel has a pn junction structure electrically, the working status of the pixel is different under different operating voltages. This results in that all the picture elements in the array are not in the same working state, and finally the electrical uniformity of the entire...
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The invention discloses an infrared focal plane array. The infrared focal plane array comprises an epitaxial wafer covered with a passivation film. The surface of the epitaxial wafer is provided witha plurality of recessed doped regions. A plurality of common electrodes are distributed at the periphery of the surface of the epitaxial wafer, the passivation film is provided with a plurality of contact holes and a plurality of bump holes corresponding to the plurality of recessed doped regions; the passivation film is formed by a first passivation region and a second passivation region in the horizontal direction, and the second passivation region is a circular ring having the same center of the circle as the bump holes; the surface of the first passivation region is coated with a first diversion electrode, the contact holes are filled with a second diversion electrode communicating with the first diversion electrode; and the first diversion electrode and the second diversion electrodeare made of metal conductive materials. The object of the present invention is to solve the technical problem that the focal plane array picture is uneven due to the difference between the pixel of the edge of the infrared focal plane array and the intermediate pixel supply voltage.
Description
technical field [0001] The invention belongs to the field of optoelectronic technology, and more specifically relates to an infrared focal plane array. Background technique [0002] An infrared detector is a light sensor that can respond to external infrared light radiation. A two-dimensional array composed of multiple infrared detector units is called an infrared focal plane array, and they are the core of an infrared detector. Infrared detectors can be divided into photon detectors and thermal detectors according to their working mechanism. After receiving infrared radiation, photon detectors can directly convert optical signals into electrical signals. Photon detectors are characterized by high sensitivity and responsiveness. Fast speed, high response frequency, generally need to work at low temperature, narrow detection band. [0003] With the development of infrared focal plane array technology, the area of the focal plane array is getting larger and larger, and the ...
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IPC IPC(8): H01L27/144H01L31/0224H01L31/18
CPCH01L27/1443H01L27/1446H01L31/02161H01L31/022408H01L31/1832Y02P70/50
Inventor 金迎春高健飞黄立刘斌
Owner WUHAN GUIDE INFRARED CO LTD