Schottky barrier transistor and preparation method thereof

A Schottky potential, transistor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as low current switching ratio, improve current switching ratio, improve immunity, and reduce off-state effect of current

Active Publication Date: 2019-04-23
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The main purpose of the present invention is to provide a Schottky barrier transistor and its preparation method, to solve the problem of low current switching ratio of Schottky barrier devices in the prior art

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  • Schottky barrier transistor and preparation method thereof
  • Schottky barrier transistor and preparation method thereof
  • Schottky barrier transistor and preparation method thereof

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Embodiment Construction

[0030] It should be noted that the embodiments of the present invention and the features in the embodiments can be combined with each other if there is no conflict. Hereinafter, the present invention will be described in detail with reference to the drawings and in conjunction with the embodiments.

[0031] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only It is a part of the embodiments of the present invention, not all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.

[0032] It should be noted that the terms "fir...

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Abstract

The present invention provides a Schottky barrier transistor and a preparation method thereof. The Schottky barrier transistor includes a substrate and a gate structure on the substrate. The Schottkybarrier transistor further includes: a channel region located at the surface of the substrate corresponding to the gate structure, wherein the channel region comprises a first metal silicide layer; and a source-drain region comprising a second metal silicide layer and a third metal silicide layer located at two sides of the channel region, wherein the second metal silicide layer is located in thesubstrate, the third metal silicide layer is located at the surface of the substrate corresponding to the second metal silicide layer, and the work function of the second metal silicide layer is smaller than the work function of the third metal silicide layer. The Schottky barrier transistor has a high mobility channel to improve the device on-state current and reduce the off-state current of thetransistor so as to improve the current switching ratio of the device.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a Schottky barrier transistor and a preparation method thereof. Background technique [0002] As the gate length of the device shrinks to the nanometer scale, Schottky source and drain have a series of advantages, such as atomic-level abrupt junction, low source and drain series resistance and contact resistance, and low source and drain technology suitable for integration of high-K metal gates. , To become the most potential substitute for doped source-drain transistors. [0003] However, in traditional Schottky barrier devices, due to the high Schottky barrier height of the source / channel in the on state, and the low Schottky barrier height of the drain / channel in the off state, there is a low current switching ratio. problem. Summary of the invention [0004] The main purpose of the present invention is to provide a Schottky barrier transistor and a manufacturing meth...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/47H01L21/336
CPCH01L29/47H01L29/66643H01L29/7839Y02P70/50
Inventor 罗军毛淑娟许静
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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