Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of W CMP multi-physics process simulation method and system

A process simulation and multi-physics technology, applied in the field of WCMP multi-physics process simulation method and system, can solve problems such as extremely difficult and complex CMP mechanism, and achieve the effect of reasonable and accurate models and clear physical meaning

Active Publication Date: 2020-08-28
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Although CMP has been introduced into the field of integrated circuits for more than 30 years, the mechanism of CMP is extremely complex and involves many physical and chemical principles. extremely difficult to control

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of W CMP multi-physics process simulation method and system
  • A kind of W CMP multi-physics process simulation method and system
  • A kind of W CMP multi-physics process simulation method and system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0060] As mentioned in the background section, the flatness of tungsten gate grinding has an important impact on the performance and yield of FinFET devices. However, there is no simulation model for tungsten gate CMP in the prior art, so it cannot guide the optimization of tungsten gate CMP process.

[0061] The inventors found that the reason for the above phenomenon is that because the CMP mechanism is extremely complex and involves many physical and chemical principles, the existing CMP modeling mainly focuses on a certain aspect of grinding and removal, such as building a model from the perspective of contact removal, or from the perspective of graphic structure Establishing a model, etc., can simplify the problem and gradually reveal the CMP process in depth, but it involves less physical and chemical principles, resulting in a large difference between the CMP model and the real process, and poor accuracy.

[0062] However, the present invention mainly reveals a variety o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a W CMP multi-physical process simulation method and system. According to the W CMP multi-physical process simulation method, a W CMP chemical reaction dynamic model and a fluiddynamic model are established by considering a chemical reaction between tungsten metal and a grinding fluid and a mechanical removal reaction between the tungsten metal and a grinding pad, then a force balance equation is solved, and finally the W CMP multi-physical process simulation method is established. According to the method, various physical and chemical relations in the W CMP process aremainly disclosed, so that the removal process of the CMP is simulated more truly, and compared with an existing CMP technology, the model is more reasonable and accurate, and the physical significance is clearer.

Description

technical field [0001] The invention relates to the technical field of chemical mechanical grinding simulation modeling, in particular to a W CMP multi-physics process simulation method and system. Background technique [0002] Chemical Mechanical Planarization (CMP), as one of the important processes in the integrated circuit manufacturing process, has become the most widely used planarization technology in the era of very large scale integrated circuits. The mechanical removal of particles makes the surface of the abrasive material reach a nano-smooth surface. [0003] As a contact metal, the W CMP process was introduced into the field of integrated circuits in 1995 and became a necessary process for the 0.35 micron process. It entered the 16 nm process node. Since Al PVD is difficult to effectively fill the trench, the high-k metal gate process The aluminum gate is replaced by the tungsten gate, and W CMP becomes a key step in the CMP process of the three-dimensional dev...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G16C20/10G06F30/398G06F30/28G06F119/14G06F113/08G06F119/18
CPCG06F30/20
Inventor 徐勤志陈岚曹鹤刘建云
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com