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Schottky clamped SCR device for ESD protection

A Schottky contact and Schottky diode technology, applied in electronic science and field, to achieve the effect of improving anti-latch capability

Active Publication Date: 2019-04-30
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is: when the noise voltage or ESD pulse voltage comes, the structure will show a sustain voltage higher than the power supply voltage, so as to be immune to the risk of latch-up and noise interference

Method used

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  • Schottky clamped SCR device for ESD protection
  • Schottky clamped SCR device for ESD protection
  • Schottky clamped SCR device for ESD protection

Examples

Experimental program
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Effect test

Embodiment 1

[0023] Such as image 3 As shown, a Schottky clamp SCR device for ESD protection includes: P-type substrate 01, p-well region 02 and n-well region 03 above P-type substrate 01, and p-well region 02 and n-well region The well region 03 is tangent, the first n+ injection layer 21 and the first p+ injection layer 11 inside the p well region 02, the third n+ injection layer 23 and the second p+ injection layer 12 inside the n well region 03, bridged The second n+ injection layer 22 used to reduce the breakdown voltage between the n well region 03 and the p well region 02, the first metal hole 31 is in contact with the third n+ injection layer 23, the second metal hole 32 is in contact with the second The p+ injection layer 12 is in contact, the third metal hole 33 is in contact with the first p+ injection layer 11, the fourth metal hole 34 is in contact with the first n+ injection layer 21, and the fifth metal hole 35 is directly in contact with the p well region 02 A Schottky co...

Embodiment 2

[0030] Such as Figure 6 Shown: the operating principle of this embodiment is the same as that of embodiment 1. The difference is that the fifth metal hole 35 in Embodiment 1 is removed, and a new sixth metal hole 36 is made on the left side of the second metal hole 32 to contact the n-well region 03 to form an N-type Schottky diode 104 .

[0031] In the equivalent circuit as Figure 7 As shown, an N-type Schottky diode 104 is connected in parallel to the emitter junction of the PNP transistor 101 . Its scope of work and principle are identical with embodiment 1.

Embodiment 3

[0033] Such as Figure 8 Shown: the operating principle of this embodiment is the same as that of embodiment 1. The difference is that the fifth metal hole 35 in Embodiment 1 is retained, and a new sixth metal hole 36 is made on the left side of the second metal hole 32 to contact the n-well region 03 to form a Schottky diode. reflected in the equivalent circuit as Figure 9 As shown, an N-type Schottky diode 104 is connected in parallel to the emitter junction of the PNP transistor 101 . A P-type Schottky diode 103 is connected in parallel to the emitter junction of the NPN transistor 102 . Its working scope and principle are the same as those of Embodiment 1.

[0034]In summary, the present invention proposes a Schottky clamp SCR structure for ESD protection. Due to the fact that the additional Schottky diode has a certain inhibitory effect on the positive feedback effect of the SCR, the maintenance voltage rises when the SCR is turned on to discharge the ESD current, so...

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Abstract

The invention provides a Schottky clamped SCR device for ESD protection, including a P-type substrate, a p-well region and an n-well region, a first n+ injection layer and a first p+ injection layer in the p-well region, a third n+ injection layer and a second p+ injection layer in the n-well region, and a second n+ injection layer cross-connected between the n-well region and the p-well region toreduce the breakdown voltage. A first metal hole is in contact with the third n+ injection layer. A second metal hole is in contact with the second p+ injection layer. A third metal hole is in contact with the first p+ injection layer. A fourth metal hole is in contact with the first n+ injection layer. A fifth metal hole is directly connected with the p-well region to form Schottky contact, so as to form a Schottky diode. The positive feedback process inside the SCR structure is weakened by the additional Schottky diode, so that the positive feedback of current of the SCR is weakened. Therefore, the maintaining voltage of the SCR rises, and the anti-latch ability of the device is improved.

Description

technical field [0001] The invention belongs to the field of electronic science and technology, and is mainly used for the protection technology of Electro Static Discharge (ESD for short). To be precise, it is a method of clamping the Schottky diode to realize the increase of the maintenance voltage of the SCR device to avoid the latch-up technology caused by ESD. Background technique [0002] In low-voltage, medium-voltage, high-voltage ESD protection and low-frequency applications, the latch-up effect of ESD devices has always been an important problem restricting device performance. For the ESD device itself, increasing the holding voltage Vh is the most reliable way to avoid the latch-up effect. In this context, many high Vh ESD protection technologies have been proposed. Such techniques are mainly divided into two categories: 1) degradation of parasitic transistors; 2) stacking of devices. For ultra-high voltage applications, device stacking technology is a good sol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02
CPCH01L27/0262
Inventor 乔明齐钊梁龙飞何林蓉张发备童成伟张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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