Trench type insulated gate bipolar transistor and preparation method thereof
A technology of bipolar transistors and insulated gates, applied in the field of trench-type insulated gate bipolar transistors and its preparation, can solve the problems of increasing off time, increasing the carrier concentration of the emitter, and deteriorating the compromise characteristics of Vce and Eoff , to achieve the effect of reducing the turn-off time and turn-off loss, improving the conduction voltage drop and turn-off loss, and enhancing the conductance modulation effect
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[0050] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.
[0051] like image 3 As shown, the first embodiment of the present invention provides a trench-type insulated gate bipolar transistor, including: a metallized collector 11, a second conductivity type collector region 10, a first conductivity type semiconductor field stop layer 9, a first Conduction type semiconductor drift region 8, second conductivity type semiconductor base region 6, second conductivity type semiconductor emission region 5, first conductivity type semiconductor emission region 3, trench gate structure, emitter metal 4, first conductivity type floating Buried layer 12, second conductivity type semiconductor second base region 13, first conductivity type source region 18, first conductivity type dra...
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