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Trench type insulated gate bipolar transistor and preparation method thereof

A technology of bipolar transistors and insulated gates, applied in the field of trench-type insulated gate bipolar transistors and its preparation, can solve the problems of increasing off time, increasing the carrier concentration of the emitter, and deteriorating the compromise characteristics of Vce and Eoff , to achieve the effect of reducing the turn-off time and turn-off loss, improving the conduction voltage drop and turn-off loss, and enhancing the conductance modulation effect

Active Publication Date: 2019-11-26
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Figure 1 shows a traditional trench IGBT device When the device is in forward conduction, due to the existence of the floating region 15 of the second conductivity type, when it is in forward conduction, it will increase the carrier concentration on the side of the emitter and reduce the conduction voltage drop. However, when the IGBT is turned off, a large amount of excess carriers cannot be extracted through the floating region 15 of the second conductivity type, which increases the turn-off time, thereby increasing the turn-off loss Eoff, and the compromise between Vce and Eoff is deteriorated.
As shown in Figure 2, in order to speed up shutdown The extraction of excess carriers in the drift region 8 of the semiconductor of the first conductivity type connects the floating region 15 of the second conductivity type to the emitter metal 4 of the device, so that when it is turned off, the excess carriers can float through the second conductivity type region 15, which reduces the turn-off time and the turn-off loss Eoff, but when the device is in forward conduction, a part of holes flow into the second conductivity type floating region 15 and flow out from the emitter metal 4 above it , which weakens the conductance modulation in the drift region, making Vce increase, and the compromise between Vce and Eoff will also deteriorate

Method used

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  • Trench type insulated gate bipolar transistor and preparation method thereof
  • Trench type insulated gate bipolar transistor and preparation method thereof
  • Trench type insulated gate bipolar transistor and preparation method thereof

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Embodiment Construction

[0050] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0051] like image 3 As shown, the first embodiment of the present invention provides a trench-type insulated gate bipolar transistor, including: a metallized collector 11, a second conductivity type collector region 10, a first conductivity type semiconductor field stop layer 9, a first Conduction type semiconductor drift region 8, second conductivity type semiconductor base region 6, second conductivity type semiconductor emission region 5, first conductivity type semiconductor emission region 3, trench gate structure, emitter metal 4, first conductivity type floating Buried layer 12, second conductivity type semiconductor second base region 13, first conductivity type source region 18, first conductivity type dra...

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Abstract

The invention relates to a trench type insulated gate bipolar transistor and a preparation method thereof, belonging to the technical field of power semiconductors. A first conductive trench MOSFET isintroduced in a second conductive floating zone of a trench type insulated gate bipolar transistor, a gate electrode of the MOSFET is in short circuit with current conversion metal, so that when thedevice is conducted forwardly, the MOSFET turns off due to low electric potential of the floating zone, electronic current converted by the conversion metal cannot flow out of a leakage electrode through MOSFET, so as not to increase voltage drop of forward conducting; when the device is turned off, MOSFET surface trench electron inverses so as to form an electron flow path due to very high electric potential of the floating zone, so that electron current converted from hole current by the conversion metal can flow out of the leakage electrode through MOSFET, surplus carriers are extracted atfaster speed, off time is shortened and off loss is reduced, and forward conducting and off loss are further balanced. The invention further relates to a preparation method for the trench type insulated gate bipolar transistor.

Description

technical field [0001] The invention belongs to the technical field of power semiconductors, and in particular relates to a trench type insulated gate bipolar transistor and a preparation method thereof. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a bipolar device controlled by an insulated gate. The higher the non-equilibrium carrier concentration in the body, the more significant the conductance modulation effect and the higher the current density. figure 1 It shows a half-cell structure of a traditional trench type IGBT device. When the device is in forward conduction, due to the existence of the floating region 15 of the second conductivity type, it will increase the current carrying capacity on the side of the emitter when it is in forward conduction. Subconcentration reduces the turn-on voltage drop, but because a large amount of excess carriers cannot be extracted through the second conductivity type floating region 15 when the IGBT is tu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L21/331H01L29/06
CPCH01L29/7397H01L29/66348H01L29/0607
Inventor 张金平罗君轶王康刘竞秀李泽宏张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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