Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A sic power device

A technology for power devices and N-type semiconductors, applied in semiconductor devices, electrical components, diodes, etc., which can solve the problems of large reverse recovery charge, slow turn-off speed of SiCIGBT, and on-state voltage drop.

Active Publication Date: 2021-07-06
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to propose a new type of SiC MOSFET and IGBT anti-parallel body diode conduction voltage drop, large reverse recovery charge and SiC IGBT slow turn-off speed, silicon-based conventional reverse conduction structure can not be used SiC MOSFET and IGBT structure

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A sic power device
  • A sic power device
  • A sic power device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0062] This embodiment provides a SiC MOSFET device integrating a PN junction body diode, and its cell structure is as follows figure 1 As shown, it includes: an N-type lightly doped region 1 as a withstand voltage region;

[0063]An N-type heavily doped ohmic contact region 14 disposed on the lower surface of the withstand voltage region 1, and an anode metal 3 covering the lower surface of the N-type heavily doped ohmic contact region 14;

[0064] Two separate gate deep grooves arranged on the upper surface of the withstand voltage region 1; the gate deep grooves are composed of an oxide layer 7 on the groove wall and a conductor 8 filled in the groove wall, and the conductor 8 is covered with Gate electrode metal 9; the semiconductor surfaces on the outside of the two gate deep grooves are respectively provided with a P-type semiconductor region base region 5, and the base region 5 is in contact with the groove wall; The contacted N-type heavily doped region 12 as the cat...

Embodiment 2

[0069] This embodiment provides a SiC MOSFET device integrating an N-type anti-parallel Schottky diode, and its cell structure is as follows: figure 2 As shown, the difference from Embodiment 1 is that: the P-type semiconductor region 6 is also provided with an N-type semiconductor region 15, and the N-type semiconductor region 15 is located between two gate deep grooves, and the P-type semiconductor region The region 6 is divided into two parts, and the lower surface of the N-type semiconductor region 15 is in contact with the withstand voltage region 1, and the upper surface forms a Schottky contact with the cathode metal 10;

[0070] When the MOSFET conducts in the reverse direction, since the conduction voltage drop of the N-type Schottky diode is lower than that of the PN junction diode, only the N-type Schottky diode participates in conduction, thus avoiding the minority carrier injection effect and reducing the Conduction loss and reverse recovery loss, EMI, etc.

Embodiment 3

[0072] This embodiment provides a SiC MOSFET device integrating an N-type anti-parallel Schottky diode, and its cell structure is as follows: image 3 As shown, it differs from Embodiment 2 in that the two parts of the P-type semiconductor region 6 located on both sides of the N-type semiconductor region 15 respectively form ohmic contacts with the cathode metal 10 through the P-type heavily doped region 11 at the semiconductor surface.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the field of power semiconductors, and specifically provides a SiC power device, including a SiC MOSFET and a SiC IGBT; wherein: for a SiC MOSFET device integrated with a PN junction body diode, the reverse recovery charge of the body diode and related losses can be greatly reduced , Reduce the reverse recovery peak current, reduce EMI noise; for SiC MOSFET devices with integrated N-type Schottky diodes or integrated heterojunction diodes, it can reduce the voltage drop when the MOSFET is reversed, eliminate the minority carrier injection effect, thereby reducing the diode Conduction loss and reverse recovery loss; for reverse-conducting SiC IGBT devices with integrated PN junction body diodes, it can greatly reduce the reverse recovery charge of the body diode and related losses, reduce the reverse recovery peak current, and reduce EMI noise; For the reverse conduction SiC IGBT device integrated with N-type Schottky diode or heterojunction diode, it can reduce the voltage drop when the reverse conduction IGBT conducts in reverse, eliminate the minority carrier injection effect, and reduce the diode conduction loss and reverse recovery loss.

Description

technical field [0001] The invention belongs to the field of power semiconductors, and specifically provides a SiC power device with low turn-on voltage drop, fast turn-off characteristics and integrated reverse fast recovery diode, including SiC MOSFET and SiC IGBT. Background technique [0002] As a new generation of power semiconductor devices, SiC power semiconductor devices have lower conduction loss, faster switching frequency and better thermal characteristics than traditional silicon-based devices. MOSFET and IGBT, which are mainstream products of power semiconductor devices, are favored among SiC materials. In MOSFET or IGBT applications, it is often necessary to connect a fast-recovery high-voltage freewheeling diode in anti-parallel. SiC MOSFET itself has a PiN body diode integrated; however, due to the large band gap of SiC, the inherent conduction voltage drop of its PN junction is about 3V, so the conduction loss of the body diode is very large; at the same ti...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/739H01L29/06
CPCH01L29/0696H01L29/7397H01L29/7804H01L29/7806H01L29/7813
Inventor 易波赵青蔺佳胡博钧陈星弼
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com