RC coupling triggering bidirectional transient voltage suppressor based on SOI process

A technology of transient voltage suppression and coupling circuits, which is applied in the direction of electric solid-state devices, circuits, electrical components, etc., can solve problems such as weak protection capabilities and chip damage, and achieve reduced voltage hysteresis, small sub-threshold current, and extended current The effect of the vent path

Active Publication Date: 2019-07-23
58TH RES INST OF CETC
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  • Abstract
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  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide an RC coupling trigger bidirectional transient voltage suppressor based on SOI technology to solve the problem of weak protection ability and easy chip damage

Method used

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  • RC coupling triggering bidirectional transient voltage suppressor based on SOI process
  • RC coupling triggering bidirectional transient voltage suppressor based on SOI process
  • RC coupling triggering bidirectional transient voltage suppressor based on SOI process

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Embodiment 1

[0034] The invention provides an RC coupling trigger bidirectional transient voltage suppressor based on SOI technology, which includes a resistance-capacitance coupling auxiliary trigger path composed of an external RC coupling circuit and NMOS, a voltage clamping path composed of a vertical PNP type BJT, and a PNPN SCR large current discharge path composed of structure, and the RC coupling trigger bidirectional transient voltage suppressor based on SOI process has a completely symmetrical device structure, which can realize bidirectional ESD with narrow voltage hysteresis and strong robustness Protection function.

[0035] Specific as figure 1 As shown, the RC coupling trigger bidirectional transient voltage suppressor based on SOI process includes a deep N well 103, and the surface of the deep N well 103 is provided with a first P+ injection region 106 and a first P well 104 in sequence from left to right. , the second N+ implantation region 108, the second P well 105 and ...

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Abstract

The invention discloses an RC coupling triggering bidirectional transient voltage suppressor based on an SOI process, belonging to the technical field of integrated circuits. According to the invention, a trigger voltage is reduced by fully utilizing the principle that a RC coupling circuit and a high-doping injection region have low reverse breakdown voltage, and the advantage of strong ESD robustness of a SCR structure is combined, so that the positive feedback of the SCR is weakened, a maintaining voltage is improved, and the ESD robustness is enhanced by introducing a transverse PNP type BJT. By utilizing the advantages of small parasitic parameters, low power consumption, radiation resistance and the like of the SOI layer, the performance of the device is further improved. In addition, the full symmetry is realized by designing the structure of the device, and the device can form an SCR current discharge path with the same electrical characteristics under the action of the positive and reverse ESD stress, so that the chip area of the ESD device can be reduced, and the bidirectional protection of the ESD pulse can be realized.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to an RC coupling trigger bidirectional transient voltage suppressor based on SOI technology. Background technique [0002] With the rapid development of IC technology, the requirements for electronic circuit products in the aerospace field are becoming increasingly stringent, civilian electronic products tend to be miniaturized and their functions are constantly enriched, and the integration level of IC chips is increasing day by day. How to suppress transient electrical pulse interference, such as ESD (Electro-Static discharge, electrostatic discharge) and other transient interference signals, has become a technical problem that many IC engineers cannot ignore. Usually, the action time of ESD electrical signal is very short, but the instantaneous energy is large, and the peak value of voltage or current is large, which can easily cause damage to IC chips. Therefore, ho...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02
CPCH01L27/0262H01L27/0266H01L27/0288H01L27/0296
Inventor 马艺珂刘湖云周昕杰梁海莲
Owner 58TH RES INST OF CETC
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