A High Voltage Bidirectional Transient Voltage Suppressor

Abstract

The invention provides a high-voltage bidirectional transient voltage suppressor and belongs to the fields of electrostatic discharge protection and surge resistance of an IC (integrated circuit). Thehigh-voltage bidirectional transient voltage suppressor can be used for improving system reliability of an on-chip IC and an electronic product and comprises a P substrate, an N type buried layer, aP well, a first N type middle doped area, a second N type middle doped area, a first N+ injection area, a first P+ injection area, a second P+ injection area, a third P+ injection area, a second N+ injection area and a metal wire. By introduction of the highly-doped P+ injection areas, adjustment for space between the two N type middle doped areas and design of sectional structure with center axissymmetry, an SCR current discharge path with strong anti-latch-up capacity can be formed under the action of forward and reverse electrical stress, and bidirectional ESD (electrostatic discharge) ortransient surge protection is realized.

Description

technical field [0001] The invention belongs to the field of electrostatic discharge protection and anti-surge of integrated circuits, relates to an ESD protection or anti-surge device, in particular to a high-voltage bidirectional transient voltage suppressor, which can be used to improve the system reliability of on-chip ICs and electronic products . Background technique [0002] Suppression of transient electrical signal interference, such as surge voltage or current, and transient signals such as electrostatic discharge (ESD), which affect the performance of integrated circuits (ICs) or electronic systems, is widely used in electronic engineering design and its applications. A technical challenge that circuit engineers cannot avoid. Usually, the action time of transient interference electrical signals is very short, but the instantaneous energy is large, and the peak voltage or current is large, which may easily cause voltage fluctuations in the power supply or control ...

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Problems solved by technology

Moreover, traditional SCRs are usually unidirectional ESD protection or anti-surge devices, and because transient electrical signals usually have characteristics such as stress direction uncertainty, the ESD protection and anti-surge functions of SCR devices are not good.

Although an external trigger circuit or an embedded gate-grounded NMOS structure can assist in triggering the SCR device and reduce the trigger voltage of the device; and increase the sustain voltage of the device by laterally elongating the device base width or increasing the number of device stacks, or by electrically inverting Two unidirectional ESD protection devices are connected in parallel to achieve bidirectional ESD protection or anti-surge. However, the above measures improve the electrical performance of the device while increasing the layout area occupied by the device, and the performance per unit area of ​​the SCR device has not been significantly improved.

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