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Methods for growing layers in light emitting devices using remote plasma chemical vapor deposition (rp-cvd) and sputter deposition

A RP-CVD, light-emitting device technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as reducing the concentration of p-type material dopant, reducing device efficiency, and deactivating p-type features.

Active Publication Date: 2021-03-26
LUMILEDS HLDG BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The hydrogen complex deactivates the p-type character of magnesium, effectively reducing the dopant concentration of the p-type material, which reduces the efficiency of the device

Method used

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  • Methods for growing layers in light emitting devices using remote plasma chemical vapor deposition (rp-cvd) and sputter deposition
  • Methods for growing layers in light emitting devices using remote plasma chemical vapor deposition (rp-cvd) and sputter deposition
  • Methods for growing layers in light emitting devices using remote plasma chemical vapor deposition (rp-cvd) and sputter deposition

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Embodiment Construction

[0019] It should be understood that the drawings and descriptions directed to methods for growing layers in light emitting devices using at least one of remote plasma chemical vapor deposition (RP-CVD) and sputter deposition have been simplified to illustrate the same The relevant elements are clearly understood, while many other elements found in typical device processing have been eliminated for the sake of clarity. Those of ordinary skill in the art may recognize that other elements and / or steps are desirable and / or required in implementing the present invention. However, because such elements and steps are well known in the art, and because they would not facilitate a better understanding of the present invention, a discussion of such elements and steps is not provided herein.

[0020] In a conventional III-nitride light-emitting diode (LED), the n-type region is first grown on the substrate, followed by the active region (or light-emitting region) and the p-type region. ...

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Abstract

Described herein are methods for growing layers of light emitting devices using remote plasma chemical vapor deposition (RP-CVD) and sputter deposition. The method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputter deposition. The tunnel junction includes a p++ layer in direct contact with the p-type region, wherein the p++ layer is grown by using at least one of RP-CVD and sputter deposition. Another method for growing the device includes growing a p-type region over the growth substrate using at least one of RP-CVD and sputter deposition, and growing other layers over the p-type region. Another method for growing the device includes growing the light emitting region and the n-type region over the p-type region using at least one of RP-CVD and sputter deposition.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of U.S. Provisional Application No. 62 / 339,412, filed May 20, 2016, and European Provisional Application No. 16 179 434.2, filed July 14, 2016, the contents of which are hereby incorporated by reference , as fully elucidated. technical field [0003] The present application relates to light emitting devices. Background technique [0004] Semiconductor light emitting devices including light emitting diodes (LEDs), resonant cavity light emitting diodes (RCLEDs), vertical cavity surface emitting lasers (VCSELs), and edge emitting lasers are among the most efficient light sources currently available. Material systems currently of interest in the fabrication of high-brightness light-emitting devices capable of operation across the visible spectrum include III-V semiconductors, particularly binary, ternary, and quaternary alloys of gallium, aluminum, indium, and nitrogen, also known as I...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L21/02H01L33/00H01L33/32
CPCH01L33/0025H01L33/005H01L33/0008H01L33/007H01L33/0075H01L33/0095H01L33/0062H01L33/06H01L33/325H01L33/02H01L33/32H01L33/36H01L33/04H01L33/62H01L21/02576H01L21/02274H01L21/02631H01L21/02271H01L21/0228H01L21/0262H01L21/02579H01L21/02458H01L21/02266H01L21/0254H01L21/324H01L29/88H01L29/66219H01L29/882H01L29/66151
Inventor I.维尔德森P.德布E.C.尼尔森J.科巴亚施
Owner LUMILEDS HLDG BV