Thin film deposition equipment and gas supply device
A technology of gas supply and supply device, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., and can solve the problem of uneven film thickness and other problems
Active Publication Date: 2019-05-07
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology
However, it is difficult to form a channel layer in a channel hole with a large aspect ratio. The thickness of the film formed in the channel hole is not uniform, and the thickness of a part located at the lower part of the channel hole is greater than that of another part located at the upper part of the channel hole. thickness
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[0026] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be described in one figure.
[0027] The invention can be embodied in various forms, some examples of which are described below.
[0028] figure 1 Schematic diagram showing the three-dimensional structure of the main components of the thin film deposition equipment. The thin film deposition equipment is, for example, an atomic layer deposition equipment. The atomic deposition equipment 100 includes a chamber main body 110, a rotating platform 120 located inside the chamber main body 110, a protective gas inlet pipe 131 penetrating through the side wal...
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The invention discloses thin film deposition equipment and a gas supply device. The gas supply device is used for providing reaction gas to the surface of a wafer. The gas supply device comprises a body part, a plurality of nozzles and at least one shielding part, wherein the body part is provided with a gas channel; the nozzles are located on the side face of the body part and communicate to thegas channel and the nozzles comprise rows of nozzles arranged the length direction of the body part in a spaced manner; and the at least one shielding part shielding at least one nozzle is mounted onthe body part, the shielding part has a plurality of mounting positions arranged along the width direction of the body part, and the rows of nozzles have different shielding amounts when the shieldingparts are located in different mounting positions along the width direction. The gas supply device adjusts the shielding amounts of the nozzles by using the shielding parts and improves the uniformity of the thin film thickness.
Description
technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, and more specifically, to thin film deposition equipment and gas supply devices. Background technique [0002] In the manufacturing process of three-dimensional memory devices, the thin film deposition generally adopts the atomic layer deposition process. Atomic layer deposition (ALD) is a method in which gas-phase precursors of different components are pulsed alternately into the reaction chamber and chemically adsorbed and reacted on the substrate to form a deposited film. Between precursors of different components, it is also necessary to clean the reaction chamber with an inert gas. A three-dimensional memory device includes a plurality of memory cells stacked in multiple layers, wherein a common channel hole is formed to penetrate through multiple gate conductor layers of the memory cells. A semiconductor material is formed in the channel hole by atomic layer de...
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IPC IPC(8): C23C16/455
Inventor 程诗垚宋海王秉国蒲浩刘松王启光
Owner YANGTZE MEMORY TECH CO LTD