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Photosensitive component, its preparation method and photosensitive substrate

A photosensitive component and light incident technology, applied in the photosensitive field, can solve problems such as complicated preparation process and blocked incident light signal

Active Publication Date: 2021-10-08
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims at the problem that the existing photosensitive component has complex preparation process and the incident light signal of the intrinsic layer is blocked, and provides a reasonable lamination relationship of the functional layers of the thin film transistor and the photodiode, which avoids the incident light signal of the intrinsic layer Blocked photosensitive component, its preparation method and photosensitive substrate

Method used

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  • Photosensitive component, its preparation method and photosensitive substrate
  • Photosensitive component, its preparation method and photosensitive substrate
  • Photosensitive component, its preparation method and photosensitive substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] Such as figure 1 As shown, this embodiment provides a photosensitive component, including:

[0058] Thin film transistors and photodiodes arranged on the substrate 01;

[0059] The thin film transistor includes a gate 6, a first electrode 11, and a second electrode 12;

[0060] The photodiode includes a PIN junction, and a third electrode 13 and a fourth electrode 14 connected to the PIN junction;

[0061] The intrinsic layer 7 of the PIN junction is closer to the light incident side of the photosensitive component than its P-type layer 21 and N-type layer 31;

[0062] The first electrode 11 and the third electrode 13 are connected to each other and arranged in the same layer.

[0063] Wherein, the first electrode 11 and the second electrode 12 refer to two electrodes in the thin film transistor that can be connected or disconnected under the control of the gate 6 .

[0064] Wherein, the PIN junction includes the intrinsic layer 7, and the P-type layer 21 and the N-...

Embodiment 2

[0081] The preparation method of the photosensitive component of this embodiment includes: forming a thin film transistor and a photodiode on the substrate 01, wherein the thin film transistor includes a grid 6, a first electrode 11, and a second electrode 12; the photodiode includes a PIN junction, and The third electrode 13 and the fourth electrode 14 connected by the PIN junction;

[0082] The intrinsic layer 7 of the PIN junction is closer to the light incident side of the photosensitive component than its P-type layer 21 and N-type layer 31;

[0083] The first electrode 11 and the third electrode 13 are connected to each other and formed through one patterning process.

[0084] The intrinsic layer 7 of the PIN junction of the present embodiment is closer to the light-incident side of the photosensitive component than its P-type layer 21 and N-type layer 31, therefore, avoiding that the incident light signal first passes through the P-type layer 21 or the N-type layer 31 t...

Embodiment 3

[0113] The photosensitive substrate of this embodiment includes: a plurality of photosensitive components described in the above-mentioned embodiment 1, and these photosensitive components can be prepared by the method for preparing the photosensitive component described in the above-mentioned embodiment 2.

[0114] Wherein, the photosensitive substrate has a plurality of photosensitive components arranged in an array, so light sensing can be realized at many positions, and it can be used to realize functions such as touch control in a display device.

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Abstract

The invention provides a photosensitive component, a preparation method thereof and a photosensitive substrate, belonging to the field of photosensitive technology, which can solve the problem that the existing photosensitive component has a complicated preparation process and incident light signals of an intrinsic layer are blocked by other functional layers. The photosensitive component of the present invention includes a thin film transistor and a photodiode arranged on a substrate. The thin film transistor includes a gate, a first electrode, and a second electrode; the photodiode includes a PIN junction, and a third electrode and a fourth electrode connected to the PIN junction. The intrinsic layer of the PIN junction is closer to the light-incident side of the photosensitive element than its P-type layer and N-type layer, and the first electrode and the third electrode are connected to each other and arranged on the same layer.

Description

technical field [0001] The invention belongs to the field of photosensitive technology, and in particular relates to a photosensitive component, a preparation method thereof and a photosensitive substrate. Background technique [0002] Photodiodes can convert light of different intensities into photocurrents of different sizes. Photodiodes are generally connected with thin-film transistors to form a photosensitive component, and thin-film transistors are used to control whether the photocurrent generated by photodiodes can be output. Photosensitive components are widely used, for example, optical sensing, fingerprint identification, human-computer interaction, etc. [0003] In related technologies, see figure 1 , the photosensitive component includes a thin film transistor and a PIN photodiode (hereinafter referred to as a PIN diode) connected together. Starting from the substrate 01, the photosensitive component includes: a substrate 01, a gate 6, a gate insulating layer ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/06H01L31/105H01L31/0352H01L31/0224H01L29/417H01L21/82
Inventor 李超杜建华关峰强朝辉王治高宇鹏吕杨
Owner BOE TECH GRP CO LTD