Parameter extraction method of ion implantation model

Abstract

The invention discloses a parameter extraction method of an ion implantation model. The parameter extraction method comprises the following steps: carrying out injection depth-injection on a numericalsimulation result of a Monte Carlo simulation model; exporting in the form of ion concentration to obtain scatter data, forming a curve, dividing the curve into four sections of regions for a single-peak curve, fitting the first region and the second region by adopting joint semi-Gaussian fitting, and fitting the third region and the fourth region by adopting a linear combination of a tail function and a joint semi-Gaussian function; for the bimodal curve, the bimodal curve is divided into five regions, the first region, the second region, the fourth region and the fifth region are fitted byadopting a combined semi-Gaussian function, and the third region is fitted by adopting a combined function of two combined semi-Gaussian functions, so that the fitting precision of the ion implantation model is greatly improved.

Description

【Technical field】 [0001] The invention belongs to the field of semiconductor chip manufacturing, in particular to a parameter extraction method of an ion implantation model. 【Background technique】 [0002] In the semiconductor manufacturing process, ion implantation is a commonly used doping technology to change the electrical properties and crystal structure, and it has important applications in the surface modification of materials. In the current semiconductor chip, especially in the manufacturing process of large-scale integrated circuits, ion implantation technology is an indispensable technical means. [0003] This technology mainly uses a high-voltage electric field to accelerate various ionized elements, so that they have high kinetic energy, and finally achieve the purpose of injecting the elements that need to be doped into the material. During the process of ion implantation on the material surface, cascade collisions will occur, which can not only change the com...

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Problems solved by technology

[0009] (5) The surface treatment of any mechanical device is applicable, and will not change the size of the workpiece, but usually the thickness of the ion implantation layer is not greater than 1 μm, and the ions can only move forward in a straight line and cannot go around, so it cannot be used for complex and inner hole parts. Ion Implantation

However, the disadvantage of the joint semi-Gaussian parameter extraction method is that it cannot accurately simulate the ion concentration at all depths.

[0017] The Pearson tail function simulation is a single Pearson function parameter extraction for low injection doses, and the fitting degree is good, but for high injection doses, the double Pearson function method has the disadvantage that the parameter extraction parameters are not unique

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