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Crystal epitaxial structure and growth method

An epitaxial growth and epitaxial structure technology, applied in semiconductor devices, photovoltaic power generation, sustainable manufacturing/processing, etc., to achieve the effects of reducing strain, reducing thickness, and suppressing dislocations

Inactive Publication Date: 2019-05-24
SUZHOU JUZHEN PHOTOELECTRIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Therefore, the technical problem to be solved by the present invention is how to eliminate the strain during the growth of mismatched epitaxial materials, thereby providing a crystal epitaxial structure and growth method

Method used

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  • Crystal epitaxial structure and growth method
  • Crystal epitaxial structure and growth method

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Embodiment 1

[0050] An embodiment of the present invention provides a crystal epitaxial growth method for preparing a GaInP / GaAs / InGaAs flip-chip triple-junction solar cell. like Figure 1-5 As shown, it specifically includes the following steps:

[0051] Step S1 , forming a lattice matching layer 2 on the first surface 11 of the substrate 1 . Wherein, the lattice constant of the lattice matching layer 2 is the same as that of the substrate 1 .

[0052] In this embodiment, the substrate 1 is selected from but not limited to GaAs, InP, InAs and other substrate materials.

[0053] As a preferred implementation manner, the lattice matching layer 2 includes a first sub-cell layer 21 , a first tunnel junction 22 , a second sub-cell layer 23 and a second tunnel junction 24 . Step S11 comprises the following steps:

[0054] Step S11 , forming a first sub-cell layer 21 on the first surface 11 of the substrate 1 . Wherein, the first sub-cell layer 21 is a GaInP sub-cell layer.

[0055] Step S...

Embodiment 2

[0082] An embodiment of the present invention provides a crystal epitaxial structure, specifically a GaInP / GaAs / InGaAs flip-chip triple-junction solar cell structure. like Figure 1-4 As shown, a substrate 1 , a lattice matching layer 2 , a first lattice mismatching layer 3 and a second lattice mismatching layer 4 are included. in,

[0083] The substrate 1 has an opposite first surface 11 and a second surface 12 , that is, the first surface 11 and the second surface 12 are two surfaces on the substrate 1 facing away from each other. Moreover, the first surface 11 and the second surface 12 are polished surfaces.

[0084] As a preferred embodiment, the thickness of the substrate 1 is 300 μm.

[0085] In this embodiment, the substrate 1 is selected from but not limited to GaAs, InP, InAs and other substrate materials.

[0086] The lattice matching layer 2 and the second lattice mismatching layer 4 are sequentially disposed on the first surface 11 . Wherein, the lattice const...

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Abstract

The invention relates to the technical field of semiconductor devices, particularly relates to a crystal epitaxial structure and a growth method, and aims at solving the problem of how to eliminate the strain in the growth of mismatched epitaxial materials. The crystal epitaxial growth method comprises the following steps: a lattice matching layer is formed on a first surface of a substrate; a first lattice mismatching layer is formed on a second surface of the substrate, wherein the first lattice mismatching layer includes a lattice gradient layer and a lattice stabilization layer; and a second lattice mismatching layer is formed on the lattice matching layer, wherein the second lattice mismatching layer includes a lattice transition layer and a lattice mismatching functional layer, and the lattice constants of the first lattice mismatching layer, the substrate and the second lattice mismatching layer increase or decrease monotonously. Through the formation of the first lattice mismatching layer, the strain states of the substrate and the lattice matching layer are changed, and therefore, the strain generated during the formation of the second lattice mismatching layer is weakened, the generation of dislocations is suppressed, the quality of the crystal epitaxial structure is improved, and the performance of semiconductor devices is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a crystal epitaxial structure and a growth method. Background technique [0002] Epitaxial growth refers to the method of extending a crystal surface with a certain crystallographic orientation and growing a single crystal film in a certain crystallographic direction. Epitaxial growth can be used to grow homogeneous and heterogeneous epitaxial layer films with abrupt or gradual changes in composition or impurity distribution. The development of epitaxial technology is of great significance for improving the quality of semiconductor materials and device performance, and for the development of new materials and new devices. [0003] In recent years, with the development of the performance of compound semiconductor devices, the demand for growing high-quality epitaxial layer structures with lattice mismatch on substrates has become more and more urgent. The tradition...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0352H01L31/0687H01L31/0693
CPCY02E10/544Y02P70/50
Inventor 胡双元米卡·瑞桑
Owner SUZHOU JUZHEN PHOTOELECTRIC
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