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Crystal epitaxial structure and growth method therefor

An epitaxial growth and epitaxial structure technology, applied in semiconductor devices, photovoltaic power generation, sustainable manufacturing/processing, etc., to achieve the effects of reducing strain, reducing thickness, and suppressing dislocations

Pending Publication Date: 2018-03-27
SUZHOU JUZHEN PHOTOELECTRIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] For this reason, the technical problem to be solved by the present invention is how to eliminate the strain when the mismatched epitaxial material grows

Method used

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  • Crystal epitaxial structure and growth method therefor
  • Crystal epitaxial structure and growth method therefor
  • Crystal epitaxial structure and growth method therefor

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Embodiment 1

[0059] An embodiment of the present invention provides a crystal epitaxial growth method for preparing a GaInP / GaAs / InGaAs flip-chip triple-junction solar cell. Such as Figure 1-5 As shown, it specifically includes the following steps:

[0060] Step S11 , forming a lattice matching layer 2 on the first surface 11 of the substrate 1 . Wherein, the lattice constant of the lattice matching layer 2 is the same as that of the substrate 1 .

[0061] In this embodiment, the substrate 1 is selected from but not limited to GaAs, InP, InAs and other substrate materials.

[0062] As a preferred implementation manner, the lattice matching layer 2 includes a first sub-cell layer 21 , a first tunnel junction 22 , a second sub-cell layer 23 and a second tunnel junction 24 . Step S11 comprises the following steps:

[0063] Step S111 , forming a first sub-cell layer 21 on the first surface 11 of the substrate 1 . Wherein, the first sub-cell layer 21 is a GaInP sub-cell layer.

[0064] S...

Embodiment 2

[0091] An embodiment of the present invention provides a crystal epitaxial structure, specifically a GaInP / GaAs / InGaAs flip-chip triple-junction solar cell structure. Such as Figure 1-4 As shown, a substrate 1 , a lattice matching layer 2 , a first lattice mismatching layer 3 and a second lattice mismatching layer 4 are included. in,

[0092] The substrate 1 has an opposite first surface 11 and a second surface 12 , that is, the first surface 11 and the second surface 12 are two surfaces on the substrate 1 facing away from each other. Moreover, the first surface 11 and the second surface 12 are polished surfaces.

[0093] As a preferred embodiment, the thickness of the substrate 1 is 300 μm.

[0094] In this embodiment, the substrate 1 is selected from but not limited to GaAs, InP, InAs and other substrate materials.

[0095] The lattice matching layer 2 and the second lattice mismatching layer 4 are sequentially disposed on the first surface 11 . Wherein, the lattice co...

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Abstract

The invention relates to the field of semiconductor devices and discloses a crystal epitaxial structure and a growth method therefor. The growth method for the crystal epitaxial structure comprises the following steps: a crystal lattice matching layer is formed on a first surface of a substrate, a first crystal lattice mismatch layer is formed on a second surface of the substrate, and a second crystal lattice mismatch layer is formed on the crystal lattice matching layer; crystal lattice constants for the first crystal lattice mismatch layer, the substrate and the second crystal lattice mismatch layer increase or decrease monotonously. Via forming of the first crystal lattice mismatch layer in the crystal epitaxial structure and the growth method therefor, strain states of the substrate and the crystal lattice matching layer are effectively changed, strain which is produced when the second crystal lattice mismatch layer is formed is effectively reduced, dislocation can be prevented, quality of the crystal epitaxial structure is improved, and performance of a semiconductor device can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a crystal epitaxial structure and a growth method. Background technique [0002] Epitaxial growth refers to the method of extending a crystal surface with a certain crystallographic orientation and growing a single crystal film in a certain crystallographic direction. Epitaxial growth can be used to grow homogeneous and heterogeneous epitaxial layer films with abrupt or gradual changes in composition or impurity distribution. The development of epitaxial technology is of great significance for improving the quality of semiconductor materials and device performance, and for the development of new materials and new devices. [0003] In recent years, with the development of the performance of compound semiconductor devices, the demand for growing high-quality epitaxial layer structures with lattice mismatch on substrates has become more and more urgent. The traditional epitaxi...

Claims

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Application Information

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IPC IPC(8): H01L31/0352H01L31/0735H01L31/18
CPCH01L31/0352H01L31/0735H01L31/1844Y02E10/544Y02P70/50
Inventor 颜建黄勇胡双元帕勒布·巴特查亚和田修
Owner SUZHOU JUZHEN PHOTOELECTRIC
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