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Reverse parallel structure zero bias detector tube

A detector tube and zero bias technology, applied in the field of detector tubes, can solve problems such as inability to detect power signals, and achieve the effects of simple process, low turn-on voltage, and high detection sensitivity

Inactive Publication Date: 2019-05-28
嘉兴腓特烈太赫科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The currently commonly used detector tube is a Schottky diode based on gallium arsenide GaAs material system. It is generally a single-tube configuration structure, that is, there is only one Schottky junction. This type of Schottky diode can only convert the sinusoidal Or half of the cosine signal is detected, but the power signal of the other half cannot be detected

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  • Reverse parallel structure zero bias detector tube
  • Reverse parallel structure zero bias detector tube
  • Reverse parallel structure zero bias detector tube

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Embodiment Construction

[0020] The technical solutions in the embodiments of the present invention are clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0021] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.

[0022] Such as Figure...

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Abstract

The invention discloses a reverse parallel structure zero bias detector tube, and relates to the technical field of detector tubes. The detector tube comprises two detection Schottky diodes. An anodeof one detection Schottky diode is connected with a cathode of the other detection Schottky diode. The joint of the two detection Schottky diodes serves as one wiring end of the detector tube. The free ends of the two detection Schottky diodes serve as another two wiring ends of the detector tube. The detector tube can detect sine simulation signals and cosine simulation signals in the whole timecycle, and the power detection in the whole cycle of millimeter wave and terahertz wave signals is realized.

Description

technical field [0001] The invention relates to the technical field of detection tubes, in particular to a zero-bias detection tube with an anti-parallel structure. Background technique [0002] Millimeter wave refers to a section of electromagnetic wave with a frequency of 26.5GHz-300GHz. Terahertz (THz) wave refers to an electromagnetic wave with a frequency in the range of 0.3-3THz. The generalized terahertz wave frequency refers to 100GHz to 10THz, where 1THz=1000GHz. Millimeter waves and terahertz waves have broad application prospects in high-speed wireless communication, radar, human body safety detection and other fields. To realize the transmission and reception of millimeter wave and terahertz frequency band signals, various millimeter wave and terahertz receiving devices are inseparable , In the receiving circuit, there is a mixer made based on the mixing Schottky diode. Generally, the mixer needs to be driven by the local oscillator power. Only when the mixing di...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R21/00
Inventor 胡海涛胡南
Owner 嘉兴腓特烈太赫科技有限公司