Power loop testing system for power semiconductor device

Abstract

The invention discloses a power loop testing system for a power semiconductor device. The power loop testing system is provided with a control circuit, stabilized-voltage power sources, refrigerationdevices and tested-device driving circuits, wherein the stabilized-voltage power sources, the refrigeration devices and the tested-device driving circuits are controlled by the control circuit; the output ends of the stabilized-voltage power sources are connected with multiple detection sub-circuits; the detection sub-circuits are provided with current detecting resistors connected with the stabilized-voltage power sources, the current detecting resistors are connected with low-resistance switch devices controlled by the control circuit to be turned on and off in series, the low-resistance switch devices are connected with voltage diving resistors in parallel, the two ends of the current detecting resistors are connected with analog signal select circuits, and the output ends of the analogsignal select circuits are connected with voltage signal collecting circuits; the output ends of the voltage signal collecting circuits are connected with the control circuit; during testing, the tested-device driving circuits are connected with tested-device grids, the low-resistance switch devices are connected with tested devices in series, and the analog signal select circuits are also connected between the sources and the drains of the tested devices.

Description

technical field [0001] The invention relates to a semiconductor device test device, in particular to a power cycle test system for a power semiconductor device with high accuracy, good reliability and wide application range. Background technique [0002] Power semiconductor devices (IGBTs, MOSFETs, GaN HEMTs, etc.), as important devices for power electronics and power conversion, have been widely used in new energy power generation, server power supplies, electric vehicles and other fields. As the core power device of the switching power supply, the reliability of the power semiconductor device directly affects the stability of the system, and the main reason for the reduction of the reliability of the power semiconductor device is the damage during the switching operation. Therefore, how to effectively evaluate the intermittent lifetime of power semiconductor devices is very important. [0003] At present, a power cycle test system has been used to conduct reliability test...

AI Technical Summary

Problems solved by technology

However, the existing power cycle test system usually uses the method of detecting the parasitic body diode voltage drop to judge the junction temperature of the device under test, so it is necessary to add a reverse small current test

It not only increases the difficulty of system equipment control, but also prolongs the interval of temperature measurement, which makes it impossible to accurately feed back the real-time junction temperature of the device under test; at the same time, the heating is interrupted, resulting in large fluctuations in the junction temperature of the device under test. Affect test accuracy

In addition, the existing power cycle test system is only suitable for devices such as IGBTs or MOSFETs, and cannot test GaN HEMTs, and the scope of application is narrow

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