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A method for preparing periodic graphene pn junctions on n-type 4h/6h-sic silicon surface

A periodic and graphene technology, applied in the field of microelectronic materials, can solve the problems of difficult element doping, complex device structure design, and inability to accurately control the area, and achieve the effect of simple process, inability to accurately control the area, and reduce damage

Active Publication Date: 2021-02-12
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The existing published graphene PN junction preparation methods have problems such as the inability to accurately control the p-type and n-type graphene regions, difficult element doping, and complex device structure design. Method for preparing periodic graphene PN junction

Method used

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  • A method for preparing periodic graphene pn junctions on n-type 4h/6h-sic silicon surface
  • A method for preparing periodic graphene pn junctions on n-type 4h/6h-sic silicon surface
  • A method for preparing periodic graphene pn junctions on n-type 4h/6h-sic silicon surface

Examples

Experimental program
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Embodiment 1

[0052] A method for preparing periodic graphene PN junctions on an n-type 4H / 6H-SiC silicon surface, comprising the steps of:

[0053] (1) Perform chemical mechanical polishing and chemical cleaning on the off-axis 4° semi-insulating and forward n-type 4H / 6H-SiC silicon surfaces (ie (0001) surface) wafers, and vacuum package them for use; chemical cleaning adopts standard Wet chemical cleaning process.

[0054] (2) prepare n-type single-layer graphene on the off-axis 4° semi-insulating SiC wafer, obtain n-type single-layer graphene micro-strips through the stripping step, the steps are as follows:

[0055] Preparation of n-type single-layer graphene: take the off-axis 4° semi-insulating SiC wafer in step (1), place it in the graphite tray in the crucible of the single crystal growth furnace, and evacuate to 10 -7 mbar, heat up to 900°C at a heating rate of 45°C / min, argon gas flow rate of 50 sccm, hydrogen gas flow rate of 25 sccm, hold for 80 min, complete etching, and obtai...

Embodiment 2

[0068] A method for preparing periodic graphene PN junctions on the n-type 4H / 6H-SiC silicon surface, its steps are as described in Example 1, the difference is that in step (3), p-type single-layer graphene is prepared The micro-strip method is:

[0069] Take the forward n-type SiC wafer in step (1), place it in the graphite tray in the crucible of the single crystal growth furnace, adjust the temperature and holding time of the buffer layer growth process and the hydrogen passivation process; buffer layer growth process: temperature 1510 ° C, Holding time 1.5h; hydrogen insertion process: temperature 1000°C, holding time 2.5h; uniform p-type single-layer graphene is formed on the surface of the forward n-type SiC substrate;

[0070] The surface of p-type single-layer graphene is periodically spin-coated with photoresist, the photoresist spin-coating width is 2 μm, and the spin-coating interval is 2 μm. The surface is covered with a photolithography plate and exposed to ultra...

Embodiment 3

[0072] A kind of method that prepares periodic graphene PN junction on n-type 4H / 6H-SiC silicon surface, its step is as described in embodiment 1, difference is, in step (2), the n-type single-layer graphene Preparation process: hydrogen etching process: argon gas flow rate 60 sccm; hydrogen gas flow rate 30 sccm; heating rate is 50 ℃ / min, heating up to 850 ℃, holding for 100 min; graphene growth process: argon gas flow rate 15 sccm, heating rate 3 ℃ / min, the temperature was raised to 1650°C, and the temperature was kept for 1h.

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Abstract

The invention relates to a method for preparing a periodic graphene PN junction on an n-type 4H / 6H-SiC silicon surface, which belongs to the technical field of microelectronic materials. The method includes the steps of: semi-insulating and forward n-type 4H / 6H‑SiC silicon surface wafer is chemically mechanically polished and chemically cleaned, and n-type single-layer graphene is prepared on an off-axis 4° semi-insulating SiC wafer, and n-type single-layer graphene micro-stripes are obtained through the stripping step. Prepare p-type single-layer graphene microstrips on n-type SiC substrates, align n-type single-layer graphene microstrips and place them on p-type single-layer graphene microstrips, apply pressure, and place the sample Heating on a heating platform, the tape is detached to obtain a periodic PN junction. The method is easy to control, and by precisely controlling the growth pressure, time, etc., a high-quality periodic graphene PN junction with uniform surface morphology is finally obtained on the Si surface of the n-type 4H / 6H-SiC substrate.

Description

technical field [0001] The invention relates to a method for preparing periodic graphene PN junctions on an n-type 4H / 6H-SiC silicon surface, belonging to the technical field of microelectronic materials. Background technique [0002] Graphene is made of carbon atoms in sp 2 Hybridization forms two-dimensional crystals with only one layer of atomic thickness, which are the basic units of other carbon-based materials. The carrier mobility of graphene at room temperature can reach 200,000 cm 2 / Vs, which is more than 140 times the mobility of intrinsic silicon semiconductors and 20 times that of gallium arsenide, is one of the materials with the highest carrier mobility at present. Adjacent carbon atoms in graphene use sp 2 The hybrid bond formation method makes the C-C bond have a strong binding energy, so graphene has high mechanical properties, its tensile strength and elastic modulus are 125GPa and 1.0TPa respectively, and the stretching elasticity reaches 20%. One of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/103H01L31/028
CPCY02P70/50
Inventor 陈秀芳秦笑徐现刚李妍璐赵显
Owner SHANDONG UNIV
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