The invention discloses a method for
grafting a dialkyl phosphinic acid functional group on the surface of a
silicon-based material, which belongs to the technical field of
solid-phase extraction separation. A dialkyl phosphinic acid functional group is grafted on the surface of a
silicon-based material through an
amide group, and R7 is an aliphatic
substituent with the
carbon atom number of 4-12. The preparation method comprises the following steps of firstly, enabling a
silicon-based material to react with a
silane cross-linking agent with amino groups, and
grafting amino groups on the surface of the silicon-based material,
grafting a carbon-carbon
double bond to the surface of the silicon-based material by utilizing an
amide group generated by reaction of amino and
acyl chloride, and grafting a dialkyl phosphinic acid functional group on the surface of the silicon-based material by using a
free radical addition reaction of a carbon-carbon
double bond and monoalkyl phosphinic acid. The preparation process is simple, the cost is low, and the prepared silicon-based adsorption material with the dialkyl phosphinic acid functional group grafted on the surface is good in
mechanical property, stable in
chemical property, fast in
adsorption kinetics, large in saturation adsorption capacity and good in selectivity and can be used for low-concentration
rare earth enrichment,
rare earth separation and nuclear-grade
zirconium and
hafnium separation.