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Forming method of micro-cantilever probe based on coupling effect of electric field and femtosecond laser

A femtosecond laser and micro-cantilever technology, applied in scanning probe technology, scanning probe microscopy, measuring devices, etc., can solve the problems of complex temperature field, affecting probe detection accuracy, affecting probe size accuracy, etc. , to achieve the effect of simple manufacturing and processing, improving dimensional accuracy, and simple and effective methods

Pending Publication Date: 2021-08-27
ZHEJIANG GONGSHANG UNIVERSITY
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Problems solved by technology

However, the temperature field induced by the femtosecond laser is very complicated, which is very different from the general temperature field.
There are multiple temperature peaks in the temperature field induced by the femtosecond laser, which will lead to the formation of multiple small probes on the surface of the micro-cantilever, which directly affects the dimensional accuracy of the probes formed by the femtosecond laser on the surface of the micro-cantilever. It will also indirectly affect the detection accuracy of the probe

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  • Forming method of micro-cantilever probe based on coupling effect of electric field and femtosecond laser
  • Forming method of micro-cantilever probe based on coupling effect of electric field and femtosecond laser
  • Forming method of micro-cantilever probe based on coupling effect of electric field and femtosecond laser

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Embodiment Construction

[0025] The technical solutions of the present invention will be further described and illustrated through preferred embodiments below.

[0026] This embodiment is based on the forming method of the micro-cantilever beam probe coupled with electric field and femtosecond laser, and the specific operation steps are as follows:

[0027] Step 1: Prepare a silicon wafer with a size in the micronano range and place it under a high-precision microscope. The silicon wafer is in the shape of a cube, with a size of 25×700×1.5μm 3 . The length and width of the silicon chip are on the order of microns, and the height of the silicon chip is on the order of nanometers. Ensure that the surface of the silicon wafer is smooth and clearly visible under a high-precision microscope.

[0028] Step 2: Fix the middle position of the silicon wafer to ensure that the silicon wafer does not move after being fixed. Adjust femtosecond laser performance parameters. Forming is performed on one side of ...

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Abstract

The invention discloses a forming method of a micro-cantilever probe based on a coupling effect of an electric field and femtosecond laser. The forming method comprises the steps of 1, placing a silicon wafer with the size within the micro-nano range under a high-precision microscope; 2, fixing the middle part of the silicon wafer, adjusting performance parameters of the femtosecond laser, and carrying out probe forming on one side of the silicon wafer; 3, applying a horizontal electric field to the left and right sides of the silicon wafer while performing femtosecond laser irradiation on the silicon wafer; and 4, after the electric field and the femtosecond laser are coupled for a period of time, forming the micro-cantilever probe. By utilizing the coupling effect of the electric field and the femtosecond laser, when the femtosecond laser irradiates the surface of the silicon cantilever beam, the electric field with certain intensity is applied to the upper and lower surfaces of the silicon cantilever beam to improve the atom induction force, so that the dimensional precision of the formed probe is greatly improved.

Description

technical field [0001] The invention belongs to the technical field of micro-nano manufacturing, and specifically relates to a forming method of a micro-cantilever beam probe based on the coupling action of an electric field and a femtosecond laser. Background technique [0002] The micro-cantilever probe is the most crucial part of the micro-sensor. The femtosecond laser is mainly used to irradiate the surface of the silicon-based cantilever beam, and the temperature field generated by the femtosecond laser is used to shape the surface probe of the cantilever beam. However, the temperature field induced by the femtosecond laser is very complicated, which is very different from the general temperature field. There are multiple temperature peaks in the temperature field induced by the femtosecond laser, which will lead to the formation of multiple small probes on the surface of the micro-cantilever, which directly affects the dimensional accuracy of the probes formed by the f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01Q60/38
CPCG01Q60/38
Inventor 陈超黄日鹏朱伟华李子烨吴正扬张俐楠
Owner ZHEJIANG GONGSHANG UNIVERSITY
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