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a la 3 ga 5 sio 14 Preparation method of thin film

A technology of thin film and ethanol solution, which is applied in chemical instruments and methods, inorganic chemistry, non-metallic elements, etc., can solve the problems affecting the performance of surface acoustic wave devices, loose film grains, etc. Density, the effect of solving the loose grain

Inactive Publication Date: 2017-07-11
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most of the films prepared by the sol-gel method are relatively loose grains, which greatly affects the performance of surface acoustic wave devices.

Method used

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  • a la <sub>3</sub> ga <sub>5</sub> sio <sub>14</sub> Preparation method of thin film
  • a la <sub>3</sub> ga <sub>5</sub> sio <sub>14</sub> Preparation method of thin film
  • a la <sub>3</sub> ga <sub>5</sub> sio <sub>14</sub> Preparation method of thin film

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preparation example Construction

[0023] A La 3 Ga 5 SiO 14 The preparation method of thin film, comprises the following steps:

[0024] Step 1: La(NO 3 ) 3 ·6H 2 O grains were added to absolute ethanol, and stirred at 40-80°C for 10-30 minutes to completely dissolve the grains to obtain clear and transparent La(NO 3 ) 3 ethanol solution; the Ga(NO 3 ) 3 Add the grain crystals into absolute ethanol, and stir at 40-80°C for 10-30 minutes to completely dissolve the grain crystals to obtain clear and transparent Ga(NO 3 ) 3 ethanol solution; Add tetraethyl orthosilicate (TEOS) into absolute ethanol and stir to obtain a clear and transparent ethanol solution of TEOS; then La(NO 3 ) 3 ethanol solution and Ga(NO 3 ) 3 Mix the ethanol solution of citric acid and the ethanol solution of TEOS into the above mixed solution under stirring conditions at a temperature of 50-80°C, and then stir at 50-80°C for 12-24 hours to obtain a precursor sol; , citric acid and La(NO 3 ) 3 ·6H 2 The molar ratio of O is ...

Embodiment 1

[0029] A La 3 Ga 5 SiO 14 The preparation method of thin film, comprises the following steps:

[0030] Step 1: Add 2.6g La(NO 3 ) 3 ·6H 2 O crystals were added to 30 mL of absolute ethanol, and stirred at 60°C for 15 min to completely dissolve the crystals to obtain clear and transparent La(NO 3 ) 3 ethanol solution; 2.56gGa(NO 3 ) 3 Add the grain crystals into 50 mL of absolute ethanol, and stir at 60°C for 15 min to completely dissolve the grain crystals to obtain clear and transparent Ga(NO 3 ) 3 ethanol solution; add 0.42g tetraethyl orthosilicate (TEOS) into 10mL absolute ethanol, stir to obtain a clear and transparent ethanol solution of TEOS; then La(NO 3 ) 3 ethanol solution and Ga(NO 3 ) 3 Mix the ethanol solution of TEOS, add 4.61g of citric acid to the above mixture under stirring conditions at 60°C, stir to dissolve, then slowly add the ethanol solution of TEOS dropwise, after the addition is completed, stir at 60°C for 24h, Obtain precursor sol;

[...

Embodiment 2

[0037] A La 3 Ga 5 SiO 14 The preparation method of thin film, comprises the following steps:

[0038] Step 1: Add 2.6g La(NO 3 ) 3 ·6H 2 O crystals were added to 30 mL of absolute ethanol, and stirred at 60°C for 15 min to completely dissolve the crystals to obtain clear and transparent La(NO 3 ) 3 ethanol solution; 2.56gGa(NO 3 ) 3 Add the grain crystals into 50 mL of absolute ethanol, and stir at 60°C for 15 min to completely dissolve the grain crystals to obtain clear and transparent Ga(NO 3 ) 3 ethanol solution; add 0.42g tetraethyl orthosilicate (TEOS) into 10mL absolute ethanol, stir to obtain a clear and transparent ethanol solution of TEOS; then La(NO 3 ) 3 ethanol solution and Ga(NO 3 ) 3 Mix the ethanol solution of TEOS, add 4.61g of citric acid to the above mixture under stirring conditions at 60°C, stir to dissolve, then slowly add the ethanol solution of TEOS dropwise, after the addition is completed, stir at 60°C for 24h, Obtain precursor sol;

[...

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Abstract

A La 3 Ga 5 SiO 14 The invention relates to a thin film preparation method, which belongs to the field of thin film material preparation. The method comprises the following steps: 1) using gallium nitrate and lanthanum nitrate as precursors, tetraethyl silicate as a silicon source, citric acid as a chelating agent, and ethanol as a solvent to prepare a precursor sol; 2) coating the precursor sol on a substrate , put it into a tube furnace for heat treatment at 150-200°C for 60-90min; 3) coat the precursor sol on the substrate obtained in the previous step, and put it in a tube furnace for heat treatment at 300-400°C for 60-90min; 4) Alternately Carry out the operations of step 2) and step 3), and after completing 4 to 20 times of spin coating and heat treatment, put the substrate into a tube furnace, heat treat at 1200-1300°C for 1-5 hours, and cool down to obtain LGS on the substrate. film. The invention has simple process and low cost, reduces the requirements on the experimental environment, and the obtained LGS thin film has a compact surface.

Description

technical field [0001] The invention belongs to the field of thin film material preparation, and in particular relates to a nitrate-based sol-gel method, which is prepared on a substrate with dense crystal grains by cross heat treatment. 3 Ga 5 SiO 14 thin film method. Background technique [0002] La 3 Ga 5 SiO 14 (LGS) single crystal belongs to the trigonal crystal system, which is Ca 3 Ga 2 Ge 4 o 14 Its piezoelectric constant and frequency-temperature coefficient are between quartz crystal and lithium niobate crystal. The electromechanical coupling coefficient of LGS is 2 to 3 times that of quartz, with good frequency stability and temperature coefficient close to 0. It has good temperature stability and chemical stability, and there is no phase transition between room temperature and melting point (1470°C). Therefore, LGS is a piezoelectric material with excellent performance and can be applied to the production of high temperature resistant surface acoustic wa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/20
Inventor 彭斌邓言文张万里张文旭王睿姜建英
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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